调控空穴传输层的分子取向提高有机发光二极管性能

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "调控空穴传输层的分子取向提高有机发光二极管性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Improving Performance of Organic Light-emitting Diodes by Tuning Molecular Orientation in Hole Transport Layer" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "崔", "givenname": "东岳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CUI", "givenname": "Dong-yue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "bio": [ { "lang": "zh", "text": [ "崔东岳(1993-)，男，河北唐山人，硕士研究生,2017年于河北科技大学获得学士学位，主要从事光电子器件方面的研究。E-mail: c3096815938@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350485&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350487&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350488&type=" } ], "data": [ [ { "name": "text", "data": "崔东岳" }, { "name": "text", "data": "(1993-)，男，河北唐山人，硕士研究生,2017年于河北科技大学获得学士学位，主要从事光电子器件方面的研究。E-mail: " }, { "name": "text", "data": "c3096815938@163.com" } ] ] } ], "email": "c3096815938@163.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "帅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Shuai", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "淑红", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Shu-hong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor3", "lang": "en", "text": "E-mail: lishuhong@lcu.edu.cn", "data": [ { "name": "text", "data": "E-mail: lishuhong@lcu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "李淑红(1974-)，女，山东聊城人，博士，副教授，硕士研究生导师,2011年于中国科学院上海光学精密机械研究所获得博士学位，主要从事光学薄膜、有机光电子材料与器件等方面的研究。E-mail: lishuhong@lcu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350491&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350492&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350494&type=" } ], "data": [ [ { "name": "text", "data": "李淑红" }, { "name": "text", "data": "(1974-)，女，山东聊城人，博士，副教授，硕士研究生导师,2011年于中国科学院上海光学精密机械研究所获得博士学位，主要从事光学薄膜、有机光电子材料与器件等方面的研究。E-mail: " }, { "name": "text", "data": "lishuhong@lcu.edu.cn" } ] ] } ], "email": "lishuhong@lcu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "云龙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Yun-long", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "文军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Wen-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor4", "lang": "en", "text": "phywang@163.com", "data": [ { "name": "text", "data": "phywang@163.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "王文军(1962-)，男，山东烟台人，博士，教授，博士研究生导师,2001年于复旦大学获得博士学位，主要从事有机光电子材料与器件/激光技术及非线性光学等方面的研究。E-mail: phywwang@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350497&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350501&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350504&type=" } ], "data": [ [ { "name": "text", "data": "王文军" }, { "name": "text", "data": "(1962-)，男，山东烟台人，博士，教授，博士研究生导师,2001年于复旦大学获得博士学位，主要从事有机光电子材料与器件/激光技术及非线性光学等方面的研究。E-mail: " }, { "name": "text", "data": "phywwang@163.com" } ] ] } ], "email": "phywwang@163.com", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "聊城大学　物理科学与信息工程学院，山东 　 聊城 　 252059", "data": [ { "name": "text", "data": "聊城大学　物理科学与信息工程学院，山东 　 聊城 　 252059" } ] }, { "lang": "en", "label": "1", "text": "School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China", "data": [ { "name": "text", "data": "School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "山东省光通信科学与技术重点实验室，山东 　 聊城 　 252059", "data": [ { "name": "text", "data": "山东省光通信科学与技术重点实验室，山东 　 聊城 　 252059" } ] }, { "lang": "en", "label": "2", "text": "Shandong Provincial Key Laboratory of Optical Communication Science and Technology, Liaocheng 252059, China", "data": [ { "name": "text", "data": "Shandong Provincial Key Laboratory of Optical Communication Science and Technology, Liaocheng 252059, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "有机发光二极管(OLED)器件性能的提高一直是有机电致发光领域备受关注的研究课题之一，通过优化OLED器件中的载流子平衡是提高OLED器件性能的一个非常重要的手段。但是，调控空穴传输层或电子传输层中的分子取向，从而优化器件中的载流子平衡未被关注。本文通过对空穴传输层进行不同温度的退火处理来改变空穴传输层中的分子取向，研究分子取向对其空穴迁移率和OLED器件性能的影响。研究发现，退火温度的升高使得空穴传输层中具有垂直取向的分子的比例增加，促进了空穴迁移率的提高。当把具有不同分子取向的空穴传输层应用于OLED器件时，可以清楚地观察到载流子平衡因子对器件性能的影响。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The performance improvement of organic light-emitting diodes(OLED) devices has always been one of the research topics in the field of organic electroluminescence. Optimization of carrier balance in OLED devices is a critical method to improve the performance of OLED devices. However, it is often neglected to optimize the carrier balance in the OLEDs by tuning the molecular orientation in the hole transport layer or electron transport layer. In this paper, the molecular orientation in the hole transport layer was altered by heat annealing at different temperatures to study the influence of molecular orientation on the hole mobility and the performance of OLED device. It showed that the proportion of molecules with vertical orientation in the hole transport layer was increased with the rise of annealing temperature, which promoted the increase of the hole mobility. When the hole transport layers with different molecular orientations were applied to OLED devices, the effect of the carrier balance factor on the device performance can be clearly observed." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "有机发光二极管" } ], [ { "name": "text", "data": "载流子平衡" } ], [ { "name": "text", "data": "单空穴器件" } ], [ { "name": "text", "data": "分子取向" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "organic light-emitting diodes(OLED)" } ], [ { "name": "text", "data": "charge carrier balance" } ], [ { "name": "text", "data": "hole-only device" } ], [ { "name": "text", "data": "molecular orientation" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "自邓青云博士在1987年报道了世界上首例有机发光二极管(OLED)以来，由于OLED器件具有低功耗、高亮度、宽光谱以及卓越的色彩显示和高效环保等特征，如今在显示和照明领域获得了广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。外量子效率(EQE)" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "是表征OLED器件性能的一个非常重要的参数:" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "IQE" } ] }, { "name": "text", "data": "×" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=γ×η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "S/T" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "×q" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "×η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "可以表示为内量子效率(IQE)" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "IQE" } ] }, { "name": "text", "data": "和光耦合效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": "的乘积," }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "IQE" } ] }, { "name": "text", "data": "可以由载流子平衡因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "、单重态-三重态因子" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "S/T" } ] }, { "name": "text", "data": "和有效量子产率" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "text", "data": "相乘得到。对于发光层中的磷光材料和热延迟荧光材料，它们可以充分利用三重态激子跃迁，使得" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "S/T" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "text", "data": "几乎达到100%。高EQE意味着低能量损耗。从节能的角度，有必要进一步提高OLED器件的EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R5", "R6", "R7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于发光层中具有水平取向跃迁偶极矩的发光分子有利于OLED器件的顶部发射，越来越多的研究者开始通过提高发光层中具有水平取向的分子跃迁偶极矩的分子比例来增加光耦合效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": "，从而提高OLED器件的EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R8", "R9", "R10", "R11", "R12" ], "text": "8-12", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。研究人员开发了很多种方法用来提高具有水平取向的分子跃迁偶极矩的分子比例，包括研发新型结构的发光材料，改变发光层的制备条件，如真空沉积时的基板温度或选择不同的主体材料等等。在OLED器件中，载流子平衡因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "对OLED器件的性能也起着决定性的作用，其中空穴传输层和电子传输层中的分子取向可以明显地改变其电学性质，从而影响OLED器件中的载流子平衡，但这方面的报道相对较少。如Lee等对作为电子传输层的Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的电学性质进行了研究，但是他们没有考虑分子取向对其产生的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";Yong和Walters等采用控制基板温度的方法分别对α-NPD、BCS、CBP等杆状分子和m-MTDATA、TCTA、2TNATA等圆盘状分子的分子取向进行了调控，杆状分子和圆盘状分子的分子取向随着基板温度的升高更加倾向于随机取向" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。Mikaeili等通过控制沉积速率的方法改变了薄膜中杆状分子α-NPD的分子取向，他们发现在高沉积速率下，杆状分子α-NPD更倾向于水平排列，同时相应的单空穴器件的电流密度和空穴迁移率也获得了增加" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。这些工作虽然通过控制基板温度和沉积速率的方法改变了薄膜中杆状分子的分子取向，但是并没有对分子取向与载流子迁移率的关系做出进一步的探究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文选取圆盘状的分子TAPC作为空穴传输材料，通过对真空蒸镀制备的薄膜进行不同温度热退火处理的方法对其分子取向进行调控，对不同温度退火处理的薄膜的分子取向、表面形貌以及相应的单空穴器件的性能进行了测试。结果发现，单空穴器件的电流密度和载流子迁移率都很大程度上依赖于其分子取向。为进一步研究分子取向对OLED器件性能的影响，我们将不同退火温度处理的空穴传输层和未经退火处理的电子传输层制备成OLED器件，以验证分子取向对空穴迁移率及器件性能的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "空穴传输材料TAPC和电子传输材料B3PYMPM的分子结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。单空穴器件(Hole-only device)和单电子器件(Electron-only device)的结构分别为:ITO(70 nm)/HAT-CN(10 nm)/TAPC(65 nm)/TCTA(10 nm)/Al(50 nm)和ITO(70 nm)/B3PYMPM(45 nm)/LiF(0.7 nm)/Al(50 nm)。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)TAPC分子结构;(b)B3PYMPM分子结构;(c)单空穴器件结构;(d)单电子器件结构。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "(a)Chemical formula of TAPC. (b)Chemical formula of B3PYMPM. (c)Structure of hole-only device. (d)Structure of electron-only device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350507&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350515&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350511&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "有机材料购买于西安宝莱特公司，所有有机薄膜都在小于5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的真空下沉积。使用M-2000VI型椭偏仪测试了TAPC薄膜的双折射，使用布鲁克公司生产的原子力显微镜对薄膜的表面形貌进行了测试。单载流子器件的电流密度和OLED器件性能使用Keithley 2400 和Spectra Scan PR655进行测试。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于圆盘状的分子TAPC，用有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "来评估分子取向，有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "定义为:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350519&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350523&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350529&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示," }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "是分子平面的法向量(垂直于分子取向)和基板平面法向量(" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": "轴)的夹角," }, { "name": "text", "data": "<" }, { "name": "text", "data": ">" }, { "name": "text", "data": "为总体平均值," }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "分别是有机薄膜在特定波长吸收下的正常消光系数和非常消光系数。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)圆盘状分子的分子取向;(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=1，分子完全平行于基板;(c)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=-0.5，分子完全垂直于基板;(d)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=0，分子取向完全随机。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of disk-shaped molecular orientation. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=1, molecular orientation is completely horizontal. (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=-0.5, molecular orientation is completely vertical. (d)" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=0, molecular orientation is random." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350533&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350542&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350538&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图2(b)(d)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)(d)" } ] } }, { "name": "text", "data": "所示," }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=1时，分子取向完全平行于基板平面;" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=-0.5时，薄膜中分子的取向完全垂直于基板平面;" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "=0时，分子的取向是随机的" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "TAPC薄膜的退火过程是在高真空的有机蒸镀腔室中进行的，以避免薄膜受到外界环境的影响。通过调控基板温度的方式，完成对薄膜的退火处理。由于TAPC的玻璃化转变温度约为82 ℃" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，我们分别对TAPC薄膜在30,40,60,70,80 ℃下进行1 h的退火处理。其中30 ℃为基板未加温时的腔室温度，薄膜在蒸镀完成之后，在高真空的腔室中静置1 h，即薄膜在该温度下等同于未经过退火处理。我们考虑到TCTA薄膜的厚度为10 nm，厚度远低于65 nm的TAPC薄膜,TCTA薄膜中分子取向的改变可能对OLED器件的性能改变很小，同时也为了保证实验中变量的单一性，因而没有对TCTA薄膜进行退火处理来改变其分子取向。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了获得薄膜准确的光学常数，对薄膜表面的6个不同位置进行测量，然后计算出有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "，得到其平均值。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "发光材料Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac的分子结构如" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "为OLED器件的结构:ITO(70 nm)/HAT-CN(10 nm)/TAPC(65 nm)/TCTA(10 nm)/TCTA∶B3PYMPM∶Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac(30 nm,10%)/B3PYMPM(45 nm)/LiF(0.7 nm)/Al(50 nm)。其中HAT-CN作为空穴注入层,TAPC和TCTA作为空穴传输层，发光层中Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac为发光材料以10%的浓度掺杂在TCTA和B3PYMPM为1∶1的共主体材料中,B3PYMPM作为电子传输层。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)发光材料Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac的分子结构;(b)OLED器件的结构及其能级。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)Chemical formula of Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac. (b)Structure and energy levels of OLED device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350546&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350554&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350550&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　不同退火温度下TAPC薄膜的分子取向" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "不同退火温度下TAPC薄膜的双折射和有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "由TAPC薄膜在371 nm波长下的寻常光和非常光的消光系数计算得到。由" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "可以看出,TAPC薄膜在不同温度下退火，都表现出明显的双折射。通过TAPC薄膜的双折射拟合出寻常光和非常光的消光系数、然后计算出的有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "可知(如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示)，在低退火温度下,TAPC薄膜中的分子取向倾向于随机取向;但是随着退火温度的升高，有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "逐渐减小，说明具有垂直取向的分子的比例在逐渐增加。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同退火温度下TAPC薄膜的双折射图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Birefringence of TAPC films depend on different annealing temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350558&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350564&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350561&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同退火温度下TAPC薄膜中有序参数" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "的变化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Order parameters " }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": " of TAPC films depend on different annealing temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350568&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350575&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350571&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "根据薄膜的表面平衡(Surface equilibration)机制" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，薄膜中分子的表面迁移率远高于薄膜内部分子的迁移率。与控制基板温度改变分子取向相似，对薄膜进行退火处理，也使得薄膜中分子的表面迁移率和具有高迁移率的分子数量发生变化。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示，分子在沉积的过程中，由于高表面迁移率，更倾向于以平行于基板的方式排列。随着沉积的持续，由于被后续的分子所掩埋，薄膜的厚度增加，之前处于薄膜表面的分子逐渐成为薄膜内部的分子，它们很难再次改变其排列方式，这使得薄膜内部分子的迁移率远低于薄膜表面分子的迁移率。当对薄膜进行退火处理时，温度升高使得薄膜中分子的动能增加，表面的分子受束缚较小，可以自由“旋转”来改变其方向，同时可以 “旋转”的分子的薄膜厚度也会随着退火温度的升高而增加(图中的绿色区域)。分子取向在平行于基板方向上的分量减少而在垂直于基板方向上的分量增加，这导致了退火温度升高使得薄膜中具有垂直取向的分子的比例增大" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同退火温度下TAPC薄膜中分子取向的变化示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Changed process of TAPC films depend on different temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350577&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350583&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350580&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　不同退火温度下TAPC薄膜的表面形貌" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "不同的退火温度会对薄膜的表面形貌造成影响，我们对不同退火温度下的薄膜进行了AFM测试，测得的AFM图像如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。均方根粗糙度" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "是表征薄膜表面粗糙程度的一个非常重要的因素，从图中可以看出，在不同的退火温度下，薄膜表面的粗糙度都极低，退火温度的变化几乎没有改变薄膜的表面形貌，不同温度退火不会改变TAPC空穴传输层与其他功能层之间的界面，进而不会阻碍载流子的传输。因此，对TAPC空穴传输层进行不同温度下的退火处理，不会由于表面形貌的改变而对相应的单空穴器件的电流密度和载流子迁移率产生影响。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同退火温度下TAPC薄膜的AFM图像" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "AFM images of TAPC films depend on different annealing temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350585&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350589&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350587&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　不同退火温度下单空穴器件的电学特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究薄膜中分子取向对其电学特性的影响，我们制备了单空穴器件，测试了电流密度-电压曲线，并计算了在不同电场强度下的空穴迁移率。如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，随着退火温度的升高，具有垂直取向的分子的比例增加，在相同电压下，电流密度获得了提高。在电压为13 V时，退火温度为30,40,60,70,80 ℃时对应的单空穴器件的电流密度分别为298.71,352.61,360.19,563.28,905.17 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。插图为未经退火处理的电子传输层对应的单电子器件的电流密度曲线。根据空间电荷限制电流(SCLC)理论" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ":" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同退火温度下单空穴器件和未经退火处理的单电子器件的电流密度-电压曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Current density-voltage curves of hole-only devices depend on different annealing temperatures and electron-only device which not underwent annealing process" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350591&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350596&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350594&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350597&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350599&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350601&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "计算了单空穴器件和单电子器件的载流子迁移率," }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "是电流密度," }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "v" } ] }, { "name": "text", "data": "是真空介电常数," }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "是相对介电常数," }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "是载流子迁移率," }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "是电场强度," }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "是薄膜厚度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中, " }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "为退火温度，载流子平衡因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "为空穴迁移率与电子迁移率的比值" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同退火温度下单空穴器件和未经退火处理的单电子器件的迁移率以及载流子平衡因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "为退火温度," }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "为空穴迁移率与电子迁移率的比值)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Carrier charge mobility of hole-only devices depend on different annealing temperatures and electron-only device without annealing process and charge balance factor " }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": " is annealing temperature, " }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": " is calculated from hole mobility divide by electron mobility)" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "/℃" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Hole mobility/(cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Electron mobility/(cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "30" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "8.25×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "10.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.778" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "40" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "9.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "10.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.903" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "60" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.02×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "10.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.963" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "70" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "10.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.22" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "80" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.34×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "10.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.26" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350607&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350604&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "可以看出，随着退火温度升高和具有垂直取向的分子比例的提高，空穴迁移率在逐渐提高。在30~60 ℃的退火温度范围内，空穴迁移率逐渐接近电子迁移率，最终在60 ℃时，载流子平衡达到了最优的状态。当退火温度高于60 ℃时，空穴迁移率越来越偏离于电子迁移率，载流子迁移率又逐渐失衡。由于TAPC薄膜的表面形貌在不同温度退火后没有发生明显的变化，这表明空穴迁移率的改变应该是来源于薄膜内分子取向的改变，较高水平的垂直分子取向有利于空穴传输层中空穴的传输。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　OLED器件" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步探究空穴传输层中分子取向的改变对OLED器件性能的影响。以未经退火处理的B3PYMPM薄膜作为电子传输层、以不同温度退火处理的TAPC薄膜作为空穴传输层制备了OLED器件，进一步测试TAPC薄膜中分子取向的改变对OLED器件性能的影响。如" }, { "name": "xref", "data": { "text": "图9(a)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)" } ] } }, { "name": "text", "data": "所示，在相同的电压下，当退火温度由30 ℃提高到60 ℃时，器件的亮度逐渐增大，在60 ℃时亮度达到了最大值;而当退火温度进一步由60 ℃提高到80 ℃时，器件的亮度逐渐降低。例如，当器件的驱动电压为19 V时，退火温度30 ℃对应的器件亮度是16 630 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",40 ℃对应的器件亮度是19 610 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",60 ℃对应的器件亮度是43 390 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",70 ℃对应的器件亮度是33 520 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",80 ℃对应的器件亮度是27 480 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "电子传输层未经过退火处理、空穴传输层分别经过30,40,60,70,80 ℃退火处理的器件亮度随电压变化(a)和电流密度随电压变化(b)曲线，插图为不同器件的电致发光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Luminance-voltage(a) and current density-voltage(b) curves of OLED devices consist of electron transport layer and hole transport layers depend on different annealing temperature 30, 40, 60, 70, 80 ℃. The inserted picture is electroluminescent spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350610&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350616&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350613&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从相同电压下器件的亮度变化可以看出载流子平衡因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "的变化起了决定性作用。当退火温度升高时,TAPC薄膜中垂直取向的分子所占比例增加，从而提高了空穴迁移能力。由前面的计算结果可知，在30~60 ℃的退火温度范围内，空穴迁移率逐渐趋近于电子迁移率;载流子在60 ℃时达到最优的平衡状态，在最大程度上提高了发光层中的激子产生率，空穴和电子在发光层充分复合发光，使得器件的亮度获得了提高;在6080 ℃的退火温度范围内，继续增长的空穴迁移率逐渐大于电子的迁移率，载流子失去了平衡，又导致了器件亮度下降。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图9(b)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(b)" } ] } }, { "name": "text", "data": "，在相同电压下，高退火温度和高比例的垂直取向的分子同样使OLED器件获得了大电流密度，这可以归因于垂直取向分子的增加提高了空穴的迁移率。插图是五种OLED器件的电致发光谱(Electroluminescent spectra,EL)，它们的发光波长都在520 nm，这说明空穴传输层中具有垂直取向的分子的增加虽然提高了空穴迁移率，但是没有改变空穴和电子在发光层中复合的位置。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　结论" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "本文对圆盘状分子TAPC薄膜在不同温度下进行退火处理，研究了其表面形貌及分子取向的变化情况，以及TAPC薄膜作为空穴传输层时单空穴器件及OLED器件的性能。研究发现，在不同的退火温度下,TAPC薄膜的表面形貌并没有发生明显的改变，但是薄膜中的分子随着退火温度的升高更容易获得高比例的垂直取向，相应的单空穴器件的空穴迁移率从30 ℃时的8.25×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "提高到了80 ℃时的1.34×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。以不同温度退火处理的TAPC薄膜作为空穴传输层的OLED器件，在最佳退火温度60 ℃时，在驱动电压为19 V的条件下，器件亮度从30 ℃时的16 630 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "提高到了60 ℃时的43 390 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。这可以归因于不同温度退火对TAPC薄膜中分子取向及空穴迁移率的影响，在60 ℃时器件有较好的载流子平衡。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KO I J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PARK J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "An accurate measurement of the dipole orientation in various organic semiconductor films using photoluminescence exciton decay analysis" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Phys. Chem. Chem. Phys." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "21" }, { "name": "text", "data": "(" }, { "name": "text", "data": "13" }, { "name": "text", "data": "):" }, { "name": "text", "data": "7083" }, { "name": "text", "data": "-" }, { "name": "text", "data": "7089" }, { "name": "text", "data": "." } ], "title": "An accurate measurement of the dipole orientation in various organic semiconductor films using photoluminescence exciton decay analysis" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KOMATSU R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CAI X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Horizontally orientated sticklike emitters:enhancement of intrinsic out-coupling factor and electroluminescence performance" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chem. Mater." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "20" }, { "name": "text", "data": "):" }, { "name": "text", "data": "8630" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8636" }, { "name": "text", "data": "." } ], "title": "Horizontally orientated sticklike emitters:enhancement of intrinsic out-coupling factor and electroluminescence performance" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "杨桢林" }, { "name": "text", "data": ", " }, { "name": "text", "data": "费纯纯" }, { "name": "text", "data": ", " }, { "name": "text", "data": "成程" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "柔性有机发光二极管柔性电极薄膜的研究进展" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "40" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "238" }, { "name": "text", "data": "-" }, { "name": "text", "data": "256" }, { "name": "text", "data": "." } ], "title": "柔性有机发光二极管柔性电极薄膜的研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "YANG Z L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FEI C C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHENG C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Review of flexible electrode film for flexible organic light-emitting diodes" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "40" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "238" }, { "name": "text", "data": "-" }, { "name": "text", "data": "256" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Review of flexible electrode film for flexible organic light-emitting diodes" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "朱筱珂" }, { "name": "text", "data": ", " }, { "name": "text", "data": "梁依倩" }, { "name": "text", "data": ", " }, { "name": "text", "data": "刘琳琳" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "发光薄膜沉积技术中薄膜晶体管的优化设计" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "86" }, { "name": "text", "data": "-" }, { "name": "text", "data": "94" }, { "name": "text", "data": "." } ], "title": "发光薄膜沉积技术中薄膜晶体管的优化设计" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHU X K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIANG Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU L L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimal design of thin film transistor in luminescent film deposition technology" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "86" }, { "name": "text", "data": "-" }, { "name": "text", "data": "94" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Optimal design of thin film transistor in luminescent film deposition technology" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM K H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM J J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Origin and control of orientation of phosphorescent and TADF dyes for high-efficiency OLEDs" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "30" }, { "name": "text", "data": "(" }, { "name": "text", "data": "42" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1705600-1-19" }, { "name": "text", "data": "." } ], "title": "Origin and control of orientation of phosphorescent and TADF dyes for high-efficiency OLEDs" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JEONG W I" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MAYR C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Organic light-emitting diodes with 30% external quantum efficiency based on a horizontally oriented emitter" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Adv. Funct. Mater." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "23" }, { "name": "text", "data": "(" }, { "name": "text", "data": "31" }, { "name": "text", "data": "):" }, { "name": "text", "data": "3896" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3900" }, { "name": "text", "data": "." } ], "title": "Organic light-emitting diodes with 30% external quantum efficiency based on a horizontally oriented emitter" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FRISCHEISEN J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YOKOYAMA D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ENDO A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Increased light outcoupling efficiency in dye-doped small molecule organic light-emitting diodes with horizontally oriented emitters" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Org. Electron." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "809" }, { "name": "text", "data": "-" }, { "name": "text", "data": "817" }, { "name": "text", "data": "." } ], "title": "Increased light outcoupling efficiency in dye-doped small molecule organic light-emitting diodes with horizontally oriented emitters" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HU T P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HAN G C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TU Z Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Origin of high efficiencies for thermally activated delayed fluorescence organic light-emitting diodes:atomistic insight into molecular orientation and torsional disorder" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Phys. Chem. C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "122" }, { "name": "text", "data": "(" }, { "name": "text", "data": "48" }, { "name": "text", "data": "):" }, { "name": "text", "data": "27191" }, { "name": "text", "data": "-" }, { "name": "text", "data": "27197" }, { "name": "text", "data": "." } ], "title": "Origin of high efficiencies for thermally activated delayed fluorescence organic light-emitting diodes:atomistic insight into molecular orientation and torsional disorder" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM J J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Org. Electron." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1010" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1015" }, { "name": "text", "data": "." } ], "title": "Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TANEDA M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YASUDA T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ADACHI C" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Horizontal orientation of a linear-shaped platinum(Ⅱ) complex in organic light-emitting diodes with a high light out-coupling efficiency" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Appl. Phys. Express" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "):" }, { "name": "text", "data": "071602" }, { "name": "text", "data": "." } ], "title": "Horizontal orientation of a linear-shaped platinum(Ⅱ) complex in organic light-emitting diodes with a high light out-coupling efficiency" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BYEON S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE D R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Nearly 100% horizontal dipole orientation and upconversion efficiency in blue thermally activated delayed fluorescent emitters" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Adv. Opt. Mater." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "15" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1701340-1-6" }, { "name": "text", "data": "." } ], "title": "Nearly 100% horizontal dipole orientation and upconversion efficiency in blue thermally activated delayed fluorescent emitters" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SENES A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MESKERS S C J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GREINER H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Increasing the horizontal orientation of transition dipole moments in solution processed small molecular emitters" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Mater. Chem. C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "26" }, { "name": "text", "data": "):" }, { "name": "text", "data": "6555" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6562" }, { "name": "text", "data": "." } ], "title": "Increasing the horizontal orientation of transition dipole moments in solution processed small molecular emitters" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LEE P T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHANG T Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN S Y" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Org. Electron." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "916" }, { "name": "text", "data": "-" }, { "name": "text", "data": "920" }, { "name": "text", "data": "." } ], "title": "Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YOUN Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YOO D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SONG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "All-atom simulation of molecular orientation in vapor-deposited organic light-emitting diodes" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Mater. Chem. C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1015" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1022" }, { "name": "text", "data": "." } ], "title": "All-atom simulation of molecular orientation in vapor-deposited organic light-emitting diodes" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WALTERS D M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ANTONY L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DE PABLO J J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Influence of molecular shape on the thermal stability and molecular orientation of vapor-deposited organic semiconductors" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Phys. Chem. Lett." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "14" }, { "name": "text", "data": "):" }, { "name": "text", "data": "3380" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3386" }, { "name": "text", "data": "." } ], "title": "Influence of molecular shape on the thermal stability and molecular orientation of vapor-deposited organic semiconductors" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MIKAEILI A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MATSUSHIMA T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ESAKI Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "The origin of changes in electrical properties of organic films fabricated at various vacuum-deposition rates" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Opt. Mater." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "91" }, { "name": "text", "data": ":" }, { "name": "text", "data": "93" }, { "name": "text", "data": "-" }, { "name": "text", "data": "100" }, { "name": "text", "data": "." } ], "title": "The origin of changes in electrical properties of organic films fabricated at various vacuum-deposition rates" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GRIGALEVICIUS S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAVGENIENE D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KRUCAITE G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "9,9'-bis(2,2-diphenylvinyl)[3,3']bicarbazole as low cost efficient hole transporting material for application in red PhOLEDs" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Dyes Pigm." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "152" }, { "name": "text", "data": ":" }, { "name": "text", "data": "100" }, { "name": "text", "data": "-" }, { "name": "text", "data": "104" }, { "name": "text", "data": "." } ], "title": "9,9'-bis(2,2-diphenylvinyl)[3,3']bicarbazole as low cost efficient hole transporting material for application in red PhOLEDs" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIM H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHIN H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM K H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "An exciplex host for deep-blue phosphorescent organic light-emitting diodes" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "ACS Appl. Mater. Interfaces" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "43" }, { "name": "text", "data": "):" }, { "name": "text", "data": "37883" }, { "name": "text", "data": "-" }, { "name": "text", "data": "37887" }, { "name": "text", "data": "." } ], "title": "An exciplex host for deep-blue phosphorescent organic light-emitting diodes" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "袁树青" }, { "name": "text", "data": ", " }, { "name": "text", "data": "朱媛莉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "王振国" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于空间电荷限制电流模型的FeCl3掺杂CBP的空穴迁移率研究" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "光电子·激光" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "25" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1288" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1293" }, { "name": "text", "data": "." } ], "title": "基于空间电荷限制电流模型的FeCl3掺杂CBP的空穴迁移率研究" }, { "lang": "en", "text": [ { "name": "text", "data": "YUAN S Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU Y L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Z G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". " }, { "name": "text", "data": "Investigation on hole mobility of FeCl3-doped 4,4'-bis(carbazol-9-yl)-biphenyl by using space-charge-limited current model" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "J. Optoelectron Laser" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "25" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1288" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1293" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Investigation on hole mobility of FeCl3-doped 4,4'-bis(carbazol-9-yl)-biphenyl by using space-charge-limited current model" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM J M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE C H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM J J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes" }, { "name": "text", "data": "[J]." }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "111" }, { "name": "text", "data": "(" }, { "name": "text", "data": "20" }, { "name": "text", "data": "):" }, { "name": "text", "data": "203301-1-5" }, { "name": "text", "data": "." } ], "title": "Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20210046", "clc": [ [ { "name": "text", "data": "TN312.8" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2021)05-0691-09", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（61775089）；山东省自然科学基金（ZR2017BF009）；聊城大学项目（318011904，318051650）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61775089); Natural Science Foundation of Shandong Province (ZR2017BF009); Project of Liaocheng University (318011904, 318051650)" } ] } ], "history": { "received": "2021-01-30", "revised": "2021-02-14", "ppub": "2021-05-01", "opub": "2021-10-22" }, "copyright": { "data": [], "year": "2021" } }, "appendix": [], "type": "announcement", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "05", "volume": "42", "originalSource": [] }