Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb<sub>2</sub>Br<sub>5</sub> Phase in Cesium Lead Bromide Perovskite Films

LIN Shudi; WU Haixia; SONG Jie; HUANG Rui; LYU Youming

doi:10.37188/CJL.20220335

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Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb₂Br₅ Phase in Cesium Lead Bromide Perovskite Films

Synthesis and Properties of Materials | 更新时间：2023-05-10

- Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb₂Br₅ Phase in Cesium Lead Bromide Perovskite Films
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 4, Pages: 634-640(2023)
- 作者机构：
  
  1.深圳大学材料学院，广东深圳　518060
  2.韩山师范学院材料科学与工程学院，广东潮州　521041
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(12104117);Natural Science Foundation of Guangdong Province(2020A1515010432)
- DOI：10.37188/CJL.20220335
  CLC： O482.31
- Published：05 April 2023，
  
  Received：15 September 2022，
  
  Revised：04 October 2022，
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林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb₂Br₅相结构演变和发光特性的影响[J].发光学报,2023,44(04):634-640.

LIN Shudi,WU Haixia,SONG Jie,et al.Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb₂Br₅ Phase in Cesium Lead Bromide Perovskite Films[J].Chinese Journal of Luminescence,2023,44(04):634-640.
林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb₂Br₅相结构演变和发光特性的影响[J].发光学报,2023,44(04):634-640. DOI： 10.37188/CJL.20220335.

LIN Shudi,WU Haixia,SONG Jie,et al.Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb₂Br₅ Phase in Cesium Lead Bromide Perovskite Films[J].Chinese Journal of Luminescence,2023,44(04):634-640. DOI： 10.37188/CJL.20220335.

摘要

基于化学气相沉积（CVD）法制备的铯铅溴钙钛矿薄膜具有优异的光电特性，然而薄膜通常存在CsPbBr

和CsPb

两个不同的相结构区域。本文通过CVD法制备了铯铅溴钙钛矿薄膜，并利用X射线衍射（XRD）、扫描电镜（SEM）、电子能谱仪（EDS）及荧光光谱仪研究了反应气压与N

流量对其中的CsPb

相结构的影响。实验结果表明，反应气压的变化对CsPb

相结构无影响；与此不同，随着N

流量的减少，薄膜中部分CsPb

相结构逐渐转变为CsPbBr

相结构，其发光也由以~630 nm为主的宽带发射转变为以~530 nm为主的窄带发射。实验表明，N

流量是调控CsPb

相结构和发光特性的有效手段。

Abstract

The cesium lead bromide perovskite thin films prepared by chemical vapor deposition （CVD） have excellent optoelectronic properties， but the thin films generally have two different phase structures， CsPbBr

and CsPb

. In our work， CVD method is considered to prepare cesium lead bromide perovskite thin films， and the effects of reaction pressure and N

flow on CsPb

in the thin films were studied by X-ray diffraction （XRD）， scanning electron microscopy（SEM）， energy dispersive spectroscopy（EDS） and fluorescence spectrometer. The results show that the change of the reaction pressure has no effect on the CsPb

phase. However， with the decrease of the N

flow， part of the CsPb

phase in the film gradually transforms into the CsPbBr

phase， and its luminescence also converts from a broadband emission dominated by ~630 nm to a narrowband emission dominated by ~530 nm. Experimental results reveal that N

flow is an effective means to control the phase structure and luminescence properties of CsPb

关键词

化学气相沉积铯铅溴钙钛矿薄膜CsPb2Br5相结构

Keywords

chemical vapor deposition（CVD）cesium lead bromide perovskite filmCsPb2Br5 phase

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Related Institution

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Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb2Br5 Phase in Cesium Lead Bromide Perovskite Films

DOI：10.37188/CJL.20220335

摘要

Abstract

关键词

Keywords

references

Effect of Deposition Parameters on Luminescence Properties and Structure Evolution of CsPb₂Br₅ Phase in Cesium Lead Bromide Perovskite Films