Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells

WANG Quhui; WANG Haizhu; WANG Jiao; MA Xiaohui

doi:10.37188/CJL.20220375

您当前的位置：

首页 >

文章列表页 >

Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells

Synthesis and Properties of Materials | 更新时间：2023-05-10

- Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 4, Pages: 627-633(2023)
- 作者机构：
  
  1.长春理工大学高功率半导体国家重点实验室，吉林长春　130022
  2.长春理工大学重庆研究院，重庆　401135
- 作者简介：
- 基金信息：
  
  Science and Technology Development Plan of Jilin Province(20210201089GX);Natural Science Foundation of Chongqing City(cstc2021jcyj⁃msxmX1060)
- DOI：10.37188/CJL.20220375
  CLC： O482.31
- Published：05 April 2023，
  
  Received：23 October 2022，
  
  Revised：08 November 2022，
扫描看全文
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633.

WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633.
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633. DOI： 10.37188/CJL.20220375.

WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633. DOI： 10.37188/CJL.20220375.

摘要

针对高应变InGaAs/GaAs多量子阱中存在的局域态问题，利用金属有机化合物气相外延（MOCVD）技术，设计并生长了五周期的In

0.3

0.7

As/GaAs高应变多量子阱材料。通过原子力显微镜（Atomic force microscope，AFM）和变温光致发光（Photoluminescence，PL）测试，发现量子阱内部存在缺陷及组分波动的材料无序性表现，验证了多量子阱内部局域态的存在及起源。同时发现在不同测试位置，局域态在低温下对光谱的影响也不同，分别表现为双峰分布和峰位“S”型变化。这进一步说明材料内部无序化程度不同，导致局域态的深度也不同。依据温度⁃带隙关系的拟合，提出了包含局域态的多量子阱材料的电势分布，并揭示了局域态载流子和自由载流子的复合机制。并且借助变功率PL测试，研究了在不同激发功率密度下不同深度的局域态的发光特性。

Abstract

In order to study the localized states in high-strain InGaAs/GaAs multiple quantum wells （MQWs）， a five-period In

0.3

0.7

As/GaAs MQWs structure was designed and grown by metal-organic chemical vapor deposition （MOCVD） technique in this paper. By means of AFM and temperature-dependent PL， the material disorders in MQWs such as defects and component fluctuation were found， and the existence and origin of localized states in MQWs were verified. The influence of the localized states on the spectra at low temperature was different for different measurement positions， exhibiting a bimodal distribution and an “S”-shaped change in peak position， respectively. This further indicated that different disorder within the material led to different depths of localized states. Based on the fitting of the temperature-bandgap relationship， the potential distribution of the MQWs structure containing localized states was proposed， and the recombination mechanism of the localized state carriers and free carriers was revealed. The optical properties of localized states at different depths under different excitation power densities were studied with the help of excitation power-dependent PL measurement.

关键词

InGaAs/GaAs多量子阱局域态高应变金属有机化合物气相外延（MOCVD）

Keywords

InGaAs/GaAs MQWslocalized stateshigh strainmetal⁃organic chemical vapor deposition（MOCVD）

references

王立军，宁永强，秦莉，等. 大功率半导体激光器研究进展［J］. 发光学报， 2015， 36（1）： 1-19. doi: 10.3788/fgxb20153601.0001bhttp://dx.doi.org/10.3788/fgxb20153601.0001b

WANG L J， NING Y Q， QIN L， et al. Development of high power diode laser ［J］. Chin. J. Lumin.， 2015， 36（1）： 1-19. （in Chinese）. doi: 10.3788/fgxb20153601.0001bhttp://dx.doi.org/10.3788/fgxb20153601.0001b

陈良惠，杨国文，刘育衔. 半导体激光器研究进展［J］. 中国激光， 2020， 47（5）： 0500001-1-23. doi: 10.3788/cjl202047.0500001http://dx.doi.org/10.3788/cjl202047.0500001

CHEN L H， YANG G W， LIU Y X， et al. Development of semiconductor lasers ［J］. Chin. J. Lasers， 2020， 47（5）： 0500001-1-23. （in Chinese）. doi: 10.3788/cjl202047.0500001http://dx.doi.org/10.3788/cjl202047.0500001

QIAO Z L， LI X， WANG H， et al. High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers ［J］. Semicond. Sci. Technol.， 2019， 34（5）： 055013-1-6. doi: 10.1088/1361-6641/ab110bhttp://dx.doi.org/10.1088/1361-6641/ab110b

KALYUZHNYY N A， EMELYANOV V M， EVSTROPOV V V， et al. Optimization of photoelectric parameters of InGaAs metamorphic laser （λ= 1 064 nm） power converters with over 50% efficiency ［J］. Sol. Energy Mater. Sol. Cells， 2020， 217： 110710-1-8. doi: 10.1016/j.solmat.2020.110710http://dx.doi.org/10.1016/j.solmat.2020.110710

YANG H M， ZHENG Y L， TANG Z， et al. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors ［J］. J. Phys. D： Appl. Phys.， 2020， 53（13）： 135110-1-7. doi: 10.1088/1361-6463/ab66d7http://dx.doi.org/10.1088/1361-6463/ab66d7

HSU K C， HO C H， LIN Y S， et al. Optical and electrical characteristics of GaAs/InGaAs quantum-well device ［J］. J. Alloys Compd.， 2009， 471（1-2）： 567-569. doi: 10.1016/j.jallcom.2008.04.089http://dx.doi.org/10.1016/j.jallcom.2008.04.089

SAIDI F， HAMILA R， MAAREF H， et al. Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD ［J］. J. Alloys Compd.， 2010， 491（1-2）： 45-48. doi: 10.1016/j.jallcom.2009.10.244http://dx.doi.org/10.1016/j.jallcom.2009.10.244

CHAN C H， WU J D， HUANG Y S， et al. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy ［J］. Mater. Chem. Phys.， 2010， 124（2-3）： 1126-1133. doi: 10.1016/j.matchemphys.2010.08.046http://dx.doi.org/10.1016/j.matchemphys.2010.08.046

ROY S， HASSAN M， KARMAKER A， et al. Strain-dependent optical properties of ［113］-oriented InGaAs/GaAs quantum well ［C］. 2015 International Conference on Advances in Electrical Engineering （ICAEE）， Dhaka， 2015： 340-343. doi: 10.1109/icaee.2015.7506864http://dx.doi.org/10.1109/icaee.2015.7506864

BUGGE F， ZEIMER U， SATO M， et al. MOVPE growth of highly strained InGaAs/GaAs quantum wells ［J］. J. Cryst. Growth， 1998， 183（4）： 511-518. doi: 10.1016/s0022-0248(97)00503-4http://dx.doi.org/10.1016/s0022-0248(97)00503-4

SCHLENKER D， MIYAMOTO T， CHEN Z， et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers ［J］. J. Cryst. Growth， 2000， 209（1）： 27-36. doi: 10.1016/s0022-0248(99)00524-2http://dx.doi.org/10.1016/s0022-0248(99)00524-2

KANG S， KIM J， JANG C W， et al. Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition ［J］. J. Alloys Compd.， 2022， 905： 164252-1-7. doi: 10.1016/j.jallcom.2022.164252http://dx.doi.org/10.1016/j.jallcom.2022.164252

WANG Q， GAO X G， XU Y L， et al. Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs ［J］. J. Alloys Compd.， 2017， 726： 460-465. doi: 10.1016/j.jallcom.2017.07.326http://dx.doi.org/10.1016/j.jallcom.2017.07.326

MAROS A， FALEEV N N， BERTONI M I， et al. Carrier localization effects in GaAs1-xSbx/GaAs heterostructures ［J］. J. Appl. Phys.， 2016， 120（18）： 183104-1-7. doi: 10.1063/1.4967755http://dx.doi.org/10.1063/1.4967755

GAO X， FANG X， TANG J L， et al. The strain， energy band and photoluminescence of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate ［J］. Solid State Commun.， 2020， 309： 113837-1-5. doi: 10.1016/j.ssc.2020.113837http://dx.doi.org/10.1016/j.ssc.2020.113837

SHIMOSAKO N， INOSE Y， SATOH H， et al. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film ［J］. J. Appl. Phys.， 2015， 118（17）： 175702-1-5. doi: 10.1063/1.4935025http://dx.doi.org/10.1063/1.4935025

MARCINKEVICIUS S， KELCHNER K M， NAKAMURA S， et al. Optical properties of extended and localized states in m-plane InGaN quantum wells ［J］. Appl. Phys. Lett.， 2013， 102（10）： 101102-1-5. doi: 10.1063/1.4794904http://dx.doi.org/10.1063/1.4794904

JOHNSON N M， NURMIKKO A V， DENBAARS S P. Blue diode lasers ［J］. Phys. Today， 2000， 53（10）： 31-36. doi: 10.1063/1.1325190http://dx.doi.org/10.1063/1.1325190

ULLOA J M， HIERRO A， MIGUEL-SÁNCHEZ J， et al. Correlation between quantum well morphology， carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes ［J］. Semicond. Sci. Technol.， 2006， 21（8）： 1047-1052. doi: 10.1088/0268-1242/21/8/011http://dx.doi.org/10.1088/0268-1242/21/8/011

WANG J， WANG H Z， WANG Q H， et al. Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD ［J］. Photonic. Nanostruct.， 2022， 51： 101047. doi: 10.1016/j.photonics.2022.101047http://dx.doi.org/10.1016/j.photonics.2022.101047

SU Y K， CHEN W C， WAN C T， et al. Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE ［J］. J. Cryst. Growth， 2008， 310（15）： 3615-3620. doi: 10.1016/j.jcrysgro.2008.04.041http://dx.doi.org/10.1016/j.jcrysgro.2008.04.041

O’DONNELL K P， CHEN X. Temperature dependence of semiconductor band gaps ［J］. Appl. Phys. Lett.， 1991， 58（25）： 2924-2926. doi: 10.1063/1.104723http://dx.doi.org/10.1063/1.104723

GE X T， WANG D K， GAO X， et al. Localized states emission in type-Ⅰ GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy ［J］. Phys. Status Solidi RRL， 2017， 11（3）： 1700001-1-5. doi: 10.1002/pssr.201700001http://dx.doi.org/10.1002/pssr.201700001

Views

149

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells

Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots

Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED

Related Author

WANG Qu-hui

WANG Hai-zhu

MA Xiao-hui

LU Hong-bo

LI Ge

LI Xin-yi

ZHANG Wei

HU Shu-hong

Related Institution

University of Chinese Academy of Sciences

Shanghai Institute of Space Power-sources

Shanghai Institute of Technology Physics, Chinese Academy of Sciences

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰