Ⅲ-Ⅴ化合物的范德华外延生长与应用

陈琪; 尹越; 任芳; 梁萌; 魏同波; 伊晓燕; 刘志强

doi:10.37188/fgxb20204108.0899

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Ⅲ-Ⅴ化合物的范德华外延生长与应用

特邀综述 | 更新时间：2020-09-10

- Ⅲ-Ⅴ化合物的范德华外延生长与应用
- Van der Waals Epitaxy of Ⅲ-Ⅴ Compounds and Their Applications
- 发光学报 2020年41卷第8期页码：899-912
- 作者机构：
  
  1.中国科学院半导体研究所照明研发中心, 北京 100083
  2.中国科学院大学, 北京 100049
  3.北京第三代半导体材料与应用工程技术研究中心, 北京 100083
- 作者简介：
  
  [ "陈琪(1998-), 女, 河北石家庄人, 硕士研究生, 2020年于华北电力大学获得学士学位, 主要从事第三代半导体材料与器件的研究。E-mail:chenq@ncepu.edu.cn" ]
  [ "伊晓燕(1978-), 女, 山东淄博人, 博士, 研究员, 博士研究生导师, 2006年于中国科学院半导体研究所获得博士学位, 主要从事新型结构大功率LED, 包括氮化镓基发光二极管器件物理及结构设计、垂直结构LED、氧化锌、石墨烯等新型透明电极材料的研究。E-mail:spring@semi.ac.cn" ]
  [ "刘志强(1979-), 男, 吉林通化人, 博士, 研究员, 博士研究生导师, 2007年于中国科学院半导体研究所获得博士学位, 主要从事宽禁带半导体材料与器件、氮化物光电器件、宽禁带/石墨烯交叉领域、氮化物新型器件及产业应用的研究。E-mail:lzq@semi.ac.cn" ]
- 基金信息：
  
  国家重点研发计划(2017YFB0403300);国家重点研发计划(2017YFB0403302);国家自然科学基金(61974140)
- DOI：10.37188/fgxb20204108.0899
  中图分类号： O484.1
- 纸质出版日期：2020-8，
  
  收稿日期：2020-6-2，
  
  录用日期：2020-6-12
扫描看全文
陈琪, 尹越, 任芳, 等. Ⅲ-Ⅴ化合物的范德华外延生长与应用[J]. 发光学报, 2020,41(8):899-912.

Qi CHEN, Yue YIN, Fang REN, et al. Van der Waals Epitaxy of Ⅲ-Ⅴ Compounds and Their Applications[J]. Chinese Journal of Luminescence, 2020,41(8):899-912.
陈琪, 尹越, 任芳, 等. Ⅲ-Ⅴ化合物的范德华外延生长与应用[J]. 发光学报, 2020,41(8):899-912. DOI： 10.37188/fgxb20204108.0899.

Qi CHEN, Yue YIN, Fang REN, et al. Van der Waals Epitaxy of Ⅲ-Ⅴ Compounds and Their Applications[J]. Chinese Journal of Luminescence, 2020,41(8):899-912. DOI： 10.37188/fgxb20204108.0899.

摘要

Ⅲ-Ⅴ化合物半导体材料体系带隙涵盖范围广、载流子迁移率高，非常适宜用来制备发光二极管、激光器、高电子迁移率晶体管等光电子器件。在异质衬底上进行Ⅲ-Ⅴ化合物的共价外延时，只有外延层与衬底层间的晶格失配度较小时才能获得高质量外延层，而范德华外延已被证实可以有效放宽外延层与衬底层间晶格失配与热失配要求，有利于外延层的应力释放与质量提高，同时也易于外延层从衬底上剥离转移，为制备Ⅲ-Ⅴ化合物基新型光电子器件提供了便利。本文对二维（2D）材料、Ⅲ-Ⅴ化合物在石墨烯上的范德华外延过程以及使用范德华外延制备的Ⅲ-N基光电子器件的各项研究进行了讨论分析，并对其前景进行了展望。

Abstract

Ⅲ-Ⅴ compound semiconductors have wide band gap and high carrier mobility

making them suitable candidates for light-emitting diodes(LEDs)

laser diodes(LDs)

high electron mobility transistors(HEMTs) and other optoelectronics. For covalent epitaxy of Ⅲ-Ⅴ compounds on hetero-substrates

high quality epilayer can only be obtained when the lattice mismatch between the substrate and epilayer is negligible. However

van der Waals epitaxy(vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the epilayer and the substrate. By using vdWE

the stress in epilayer can be sufficiently relaxed

and the epilayer can be easily exfoliated and transferred

which is useful for the Ⅲ-Ⅴ compound-based novel devices fabricating. In this paper

we reviewed and discussed the important progresses on the researches of nitrides vdWE. The potential applications of nitrides vdWE are also prospected.

关键词

石墨烯范德华外延Ⅲ-Ⅴ化合物

Keywords

graphenevan der Waals epitaxyⅢ-Ⅴ compound

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