您当前的位置:
首页 >
文章列表页 >
Effect of Crystal and Band/Electronic Structures on Luminescence Property of Ce3+ Doped Y-Si-O-N Luminescent Materials
Synthesis and Properties of Materials | 更新时间:2022-08-01
    • Effect of Crystal and Band/Electronic Structures on Luminescence Property of Ce3+ Doped Y-Si-O-N Luminescent Materials

      增强出版
    • Chinese Journal of Luminescence   Vol. 43, Issue 7, Pages: 1061-1069(2022)
    • DOI:10.37188/CJL.20220105    

      CLC:

    扫 描 看 全 文

  • HU Xiang-yu,ZHU Qiang-qiang,ZHAI Yue,et al.Effect of Crystal and Band/Electronic Structures on Luminescence Property of Ce3+ Doped Y-Si-O-N Luminescent Materials[J].Chinese Journal of Luminescence,2022,43(07):1061-1069. DOI: 10.37188/CJL.20220105.

  •  

0

Views

228

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Publicity Resources

CJL | Luminescent material structure and energy band engineering facilitate high quality solid state lighting

Related Articles

First-principles Calculations on Site Occupancy, Valence State and Luminescent Properties of Transition Metal Activators in Solids
Crystal Structure and Luminescent Properties of Ba2+ Modulated SrGe4-xO9xMn4+ Phosphors
Phase Constitutions and Luminescent Spectra of(Mg1-xSrx)2SiO4: (Eu3+,F-) Phosphors
Optical Properties of Defects in GaN Based LED Irradiated by Electron

Related Author

No data

Related Institution

Department of Physics, School of Physical Sciences, University of Science and Technology of China
CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China
Basic Experiment Center, Shaanxi Normal University
School of Chemistry & Chemical Engineering, Shaanxi Normal University
Shield Advanced Material Technology Company
0