Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material <italic style="font-style: italic">γ</italic>-SrGa2O4∶Bi3+

WANG Ya-jie; WANG Zhong-zhi; WANG Yu-hua

doi:10.37188/CJL.20220197

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Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa₂O₄∶Bi³⁺

Synthesis and Properties of Materials | 更新时间：2023-10-27

- Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa₂O₄∶Bi³⁺
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 10, Pages: 1542-1551(2022)
- 作者机构：
  
  1.兰州大学材料与能源学院，甘肃兰州　730000
  2.包头稀土研究院，内蒙古包头　014030
- 作者简介：
- 基金信息：
  
  foundation of China Northern Rare Earth(NERE201908)
- DOI：10.37188/CJL.20220197
  CLC： O482.31
- Published：05 October 2022，
  
  Received：19 May 2022，
  
  Revised：05 June 2022，
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王亚杰,王忠志,王育华.新型黄色长余辉材料γ‑SrGa₂O₄∶Bi³⁺的制备及性能[J].发光学报,2022,43(10):1542-155110.37188/CJL.20220197.

WANG Ya-jie,WANG Zhong-zhi,WANG Yu-hua.Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa₂O₄∶Bi³⁺[J].Chinese Journal of Luminescence,2022,43(10):1542-155110.37188/CJL.20220197.
王亚杰,王忠志,王育华.新型黄色长余辉材料γ‑SrGa₂O₄∶Bi³⁺的制备及性能[J].发光学报,2022,43(10):1542-155110.37188/CJL.20220197. DOI：

WANG Ya-jie,WANG Zhong-zhi,WANG Yu-hua.Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa₂O₄∶Bi³⁺[J].Chinese Journal of Luminescence,2022,43(10):1542-155110.37188/CJL.20220197. DOI：

摘要

长余辉材料中的深陷阱具有优异的能量存储和释放性能，因此在光学信息存储方面有很大应用优势。本文采用高温固相法合成了新型黄色长余辉材料

⁃SrGa

∶Bi

，其发射光谱是以565 nm为中心、范围为400~800 nm的宽带发射，该发射归属于Bi

离子的

→

跃迁。在紫外灯照射后，观察到

⁃SrGa

∶Bi

样品明亮的黄色长余辉发光。通过热释光谱分析可知

⁃SrGa

∶Bi

中主要有三种陷阱，其深度分别为0.678，0.838，0.978 eV。深度为0.678 eV的浅陷阱是该材料产生长余辉现象的主要原因，而深度为0.838 eV的深陷阱对应的热释峰强度在12 h后仅下降18.6%，这说明深陷阱中电子释放缓慢。基于材料的深陷阱性能，设计了字母图案并对其进行光学信息存储实验，结果表明该材料在信息存储方面有潜在应用前景。

Abstract

Deep traps in long persistent luminescence（LPL） materials have excellent energy storage and release properties， and thus have great application advantages in optical information storage. In this paper， a novel yellow long afterglow material

-SrGa

∶Bi

was synthesized by high-temperature solid-phase method， and its emission spectrum is a broadband emission centered at 565 nm in the range of 400-800 nm， which is attributed to the

→

transitions of Bi

. The bright yellow LPL of the

-SrGa

∶Bi

sample was observed after UV lamp irradiation. The analysis of the thermoluminescence（TL） curve indicates that there are three main traps in

-SrGa

∶Bi

with the depths of 0.678， 0.838， 0.978 eV， respectively. The shallow trap with a depth of 0.678 eV is the main reason for the LPL phenomenon of the material， while the intensity of the TL peak corresponding to the deep trap with a depth of 0.838 eV only decreases by 18.6% after 12 h， which indicates the slow electron release in the deep trap. Based on the deep trap properties of the material， the letter patterns were designed and experimented for optical information storage， and the results showed that the material has potential applications in information storage.

关键词

信息存储γ-SrGa2O4∶Bi3+黄色长余辉陷阱

Keywords

information storageγ-SrGa2O4∶Bi3+yellow long persistent luminescencetrap

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⁰

Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa2O4∶Bi3+

DOI：10.37188/CJL.20220197

摘要

Abstract

关键词

Keywords

references

Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa₂O₄∶Bi³⁺