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基于TiO2修饰层的量子点发光二极管设计及其性能
增强出版Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer
- 发光学报 2022年43卷第3期 页码：381-387
- 作者机构：
盐城师范学院 物理与电子工程学院，江苏 盐城 224007
- 作者简介：
[ "刘卫卫(1981-)，男，江苏淮安人，博士，副教授，2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体和量子点发光材料与器件的研究。E-mail: liuww@yctu.edu.cn" ]
[ "孔佑超(1988-)，男，陕西西安人，博士，讲师，2021年于中国澳门大学获得博士学位，主要从事低微半导体发光器件和第一性原理计算相关的研究。E-mail: Yb87816@connect.um.edu.mo" ]
- 基金信息：国家自然科学基金青年基金(61504118);江苏省自然科学基金青年基金(BK20201064);江苏省高等学校自然科学研究面上项目(19KJB430040)
DOI：10.37188/CJL.20220002
中图分类号： TN312.8纸质出版日期：2022-03，
收稿日期：2022-01-04，
修回日期：2022-01-17，
扫 描 看 全 文
刘卫卫, 孔佑超, 陈小波, 等. 基于TiO2修饰层的量子点发光二极管设计及其性能[J]. 发光学报, 2022,43(3):381-387.
Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer[J]. Chinese Journal of Luminescence, 2022,43(3):381-387.
刘卫卫, 孔佑超, 陈小波, 等. 基于TiO2修饰层的量子点发光二极管设计及其性能[J]. 发光学报, 2022,43(3):381-387. DOI： 10.37188/CJL.20220002.
Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer[J]. Chinese Journal of Luminescence, 2022,43(3):381-387. DOI： 10.37188/CJL.20220002.
摘要
量子点发光二极管(QLEDs)具有色饱和度和色纯度高等优点，在照明与显示领域具有广泛应用前景，成为发光领域研究的热点之一。由于器件采用多层结构，表面和界面问题成为制约QLEDs发展的一个棘手问题。本文使用原子层沉积技术在氧化锌(ZnO)电子传输层和量子点(QDs)发光层之间插入不同厚度的二氧化钛(TiO
2
)薄层，对ZnO和QDs发光层之间的界面进行修饰。发现插入0.270 nm的TiO
2
后，器件的漏电流降低约一个量级，激子的平均寿命从15.94 ns增加到16.61 ns，说明插入TiO
2
修饰层可以有效降低QDs发光层中激子猝灭，从而提高器件在低驱动电压下的电流效率(约提高15%)。上述结果有望为QLEDs在照明和显示领域的产业化提供参考。
Abstract
Due to high color saturation and high color purity
quantum dot(QD) light-emitting diodes(QLEDs) have become one of the hotspots in LEDs research for their potential application in lighting and display. Surface and interface issues have become a thorny issue which restricting the development of QLEDs with multilayer structure. In this paper
the interface between electron transport layer zinc oxide(ZnO) and QDs emitting layer was modified by inserting titanium dioxide(TiO
2
) layers with different thickness based on atomic layer deposition(ALD) technology. After inserting 0.270 nm TiO
2
modified layer
the leakage current of the QLEDs was significantly reduced about an order of magnitude
and the average lifetime of the excitons increased from 15.94 ns to 16.61 ns
indicating that the insertion of the TiO
2
modified layer can effectively prevent the exciton quenching in QDs emitting layer
thereby enhancing the current efficiency of the QLEDs under low driving voltage(about increased 15%). The above results are expected to provide a reference for the industrialization of QLEDs in the field of lighting and display.
关键词
量子点发光二极管二氧化钛界面修饰
Keywords
quantum dotlight-emitting diodesTiO2interface modification
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