发光窗口对MOS结构硅LED电光性能的影响

吴克军; 黄兴发; 李则鹏; 易波; 赵建明; 钱津超; 徐开凯

doi:10.37188/fgxb20204107.0834

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发光窗口对MOS结构硅LED电光性能的影响

器件制备及器件物理 | 更新时间：2020-09-10

- 发光窗口对MOS结构硅LED电光性能的影响
- Effect of Light Window on MOS-like Silicon LED Electro-optic Properties
- 发光学报 2020年41卷第7期页码：834-838
- 作者机构：
  
  1.电子科技大学电子科学与工程学院, 四川成都 610054
  2.中国电科第二十四研究所模拟集成电路重点实验室, 重庆 400060
- 作者简介：
  
  [ "吴克军(1986-), 男, 四川剑阁人, 博士, 博士后, 2017年于电子科技大学获得博士学位, 主要从事大规模集成电路、光电集成系统、硅基光源器件等方面的研究。E-mail:kjwu@uestc.edu.cn" ]
  [ "徐开凯(1984-), 男, 重庆人, 博士, 教授, 2014年于加州大学欧文分校获得博士学位, 主要从事半导体光电器件与集成技术的研究。E-mail:kaikaix@uestc.edu.cn" ]
- 基金信息：
  
  四川省科技计划(2020JDJQ0022);国家重点研发项目(2018YFE0181500);国家自然科学基金(61674001);国家自然科学基金(61704019)
- DOI：10.37188/fgxb20204107.0834
  中图分类号： TN312.8
- 纸质出版日期：2020-7，
  
  收稿日期：2020-3-23，
  
  录用日期：2020-5-28
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吴克军, 黄兴发, 李则鹏, 等. 发光窗口对MOS结构硅LED电光性能的影响[J]. 发光学报, 2020,41(7):834-838.

Ke-jun WU, Xing-fa HUANG, Ze-peng LI, et al. Effect of Light Window on MOS-like Silicon LED Electro-optic Properties[J]. Chinese Journal of Luminescence, 2020,41(7):834-838.
吴克军, 黄兴发, 李则鹏, 等. 发光窗口对MOS结构硅LED电光性能的影响[J]. 发光学报, 2020,41(7):834-838. DOI： 10.37188/fgxb20204107.0834.

Ke-jun WU, Xing-fa HUANG, Ze-peng LI, et al. Effect of Light Window on MOS-like Silicon LED Electro-optic Properties[J]. Chinese Journal of Luminescence, 2020,41(7):834-838. DOI： 10.37188/fgxb20204107.0834.

摘要

通过0.18 μm标准CMOS工艺设计并制备了一种MOS结构的硅基发光器件。该光源器件在一个n阱中设计了两个相同的PMOS，分别利用p

源/漏区与n阱形成的p

n结进行反偏雪崩击穿而发射可见光。测试结果显示，该光源器件在正偏状态下的开启电压为0.8 V，在6 V的反偏电压下发生雪崩击穿，能够发出黄色的可见光，发光频谱范围为420~780 nm。本文对比了0.5 μm和2 μm两个不同发光窗口宽度的测试结果，发现该光源器件在更小发光窗口具有更高的发光强度和更好的发光均匀度，该特征与发光器件的反向电流密度分布和光在金属电极间的反射有关。研究成果在片上硅基光电集成回路中具有一定的应用价值。

Abstract

In this paper

a MOS-like silicon light-emitting device is designed and fabricated under 0.18 μm standard CMOS technology. The device consists of two identical PMOS in the same n-well

and uses the p

n junctions formed between p

source/drain region and n-well for avalanche breakdown to emit visible light. The measurement results indicate that the device has a turn-on voltage of 0.8 V at forward bias

and avalanche breakdown at reverse bias voltage of 6 V

which can emit yellow visible light with spectrum of 420-780 nm. By comparing the measurement results of two MOS-like silicon LEDs with different light window widths of 0.5 μm and 2 μm

it is found that the silicon LED with smaller light window has higher luminescent intensity and better uniformity

which is related to the distribution of reverse current density and the light reflection between metal electrodes. The research of this paper has attractive application in silicon-based optoelectronic integrated circuits on chip.

关键词

硅基发光器件CMOS工艺发光窗口

Keywords

silicon light-emitting deviceCMOS processlight window

references

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