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南昌大学 国家硅基LED工程技术研究中心,江西 南昌,330047
纸质出版日期:2020-4-5,
网络出版日期:2019-11-19,
收稿日期:2019-10-12,
修回日期:2019-11-1,
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廖芳, 莫春兰, 王小兰等. 量子垒生长速率对InGaN基绿光LED性能的影响[J]. 发光学报, 2020,41(4): 429-434
LIAO Fang, MO Chun-lan, WANG Xiao-lan etc. Growth Rate of Quantum Barrier on Performance of InGaN-based Green LEDs[J]. Chinese Journal of Luminescence, 2020,41(4): 429-434
廖芳, 莫春兰, 王小兰等. 量子垒生长速率对InGaN基绿光LED性能的影响[J]. 发光学报, 2020,41(4): 429-434 DOI: 10.3788/fgxb20204104.0429.
LIAO Fang, MO Chun-lan, WANG Xiao-lan etc. Growth Rate of Quantum Barrier on Performance of InGaN-based Green LEDs[J]. Chinese Journal of Luminescence, 2020,41(4): 429-434 DOI: 10.3788/fgxb20204104.0429.
利用MOCVD技术在图形化Si (111)衬底上生长了InGaN/GaN绿光LED外延材料。在GaN量子垒的生长过程中,保持NH
3
流量不变,通过调节三乙基镓(TEGa)源的流量来改变垒生长速率,研究了量子垒生长速率对LED性能的影响。使用二次离子质谱仪(SIMS)和荧光显微镜(FLM)分别对量子阱的阱垒界面及晶体质量进行了表征,使用电致发光测试系统对LED光电性能进行了表征。实验结果表明,垒慢速生长,在整个测试电流密度范围内,外量子效率(EQE)明显提升。我们认为,小电流密度下,EQE的提升归结为量子阱晶体质量的改善;而大电流密度下,EQE的提升则归结为阱垒界面陡峭程度的提升。
InGaN/GaN green light-emitting diodes (LEDs) were grown on patterned silicon (111) substrate by metal-organic vapor deposition (MOCVD) method. During the growth process of GaN quantum barrier (QB)
the ammonia flow rate was kept constant and the barrier growth rate was reduced by adjusting the three ethyl gallium(TEGa) flow rate. The effect of quantum barrier growth rate on the LED performance has been investigated. It is found that the external quantum efficiency (EQE) increases obviously in the whole range of test current density when the barrier growth rate is reduced. It suggests that the improvement of EQE at low current density can be attributed to the better crystal quality of quantum well and the increase of EQE at high current density is due to the steeper interface between quantum barrier and quantum well.
绿光LED量子垒生长速率外量子效率
green LEDquantum barriergrowth rateexternal quantum efficiency(EQE)
JIA H Q,GUO L W,WANG W X,et al.. Recent progress in GaN-based light-emitting diodes [J]. Adv. Mater., 2009,21(45):4641-4646.
KRAMES M R,SHCHEKIN O B,MUELLER-MACH R,et al.. Status and future of high-power light-emitting diodes for solid-state lighting [J]. J. Disp. Technol., 2007,3(2):160-175.
NAKAMURA S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J]. Science,1998,281(5379):956-961.
MCKITTRICK J,SHEA-ROHWER L E. Review:down conversion materials for solid-state lighting [J]. J. Am. Ceram. Soc., 2014,97(5):1327-1352.
EL-MASRY N A,PINER E L,LIU S X,et al.. Phase separation in InGaN grown by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 1998,72(1):40-42.
MCCLUSKEY M D,ROMANO L T,KRUSOR B S,et al.. Phase separation in InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998,72(14):1730-1732.
ZHU X L,GUO L W,GE B H,et al.. Observation of metallic indium clusters in thick InGaN layer grown by metal organic chemical vapor deposition [J]. Appl. Phys. Lett., 2007,91(17):172110-1-3.
TANSLEY T L,EGAN R J. Point-defect energies in the nitrides of aluminum,gallium,and indium [J]. Phys. Rev. B,1992,45(19):10942-10950.
TAKEUCHI T,WETZEL C,YAMAGUCHI S,et al.. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect [J]. Appl. Phys. Lett., 1998,73(12):1691-1693.
高江东,刘军林,徐龙权,等. 垒温对硅衬底GaN基蓝光LED发光效率的影响 [J]. 发光学报, 2016,37(2):202-207. GAO J D,LIU J L,XU L Q,et al.. Dependence of electroluminescence on barriers temperature in GaN base blue LED on silicon substrate [J]. Chin. J. Lumin., 2016,37(2):202-207. (in Chinese)
XU J R,SCHUBERT M F,NOEMAUN A N,et al.. Reduction in efficiency droop,forward voltage,ideality factor,and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes [J]. Appl. Phys. Lett., 2009,94(1):011113-1-3.
CHO Y,SONG J J,KELLER S,et al.. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998,73(8):1128-1130.
MO C L,FANG W Q,PU Y,et al.. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD [J]. J. Cryst. Growth, 2005,285(3):312-317.
LIU J L,FENG F F,ZHOU Y H,et al.. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate [J]. Appl. Phys. Lett., 2011,99(11):111112-1-3.
CHEONG M G,YOON H S,CHOI R J,et al.. Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition [J]. J. Appl. Phys., 2001,90(11):5642-5646.
CHO H K,LEE J Y,KIM C S,et al.. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition [J]. J. Appl. Phys., 2002,91(3):1166-1170.
DAMILANO B,GIL B. Yellow-red emission from (Ga,In) N heterostructures [J]. J. Phys. D: Appl. Phys., 2015,48(40):403001.
CHENG Y C,WU C M,CHEN M K,et al.. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers [J]. Appl. Phys. Lett., 2004,84(26):5422-5424.
LE L C,ZHAO D G,JIANG D S,et al.. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2012,101(25):252110-1-4.
CHO Y H,LEE S K,KWACK H S,et al.. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters [J]. Appl. Phys. Lett., 2003,83(13):2578-2580.
TAYLOR E,FANG F,OEHLER F,et al.. Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates [J]. Semic. Sci. Technol., 2013,28(6):065011-1-7.
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