浏览全部资源
扫码关注微信
北京工业大学 激光工程研究院, 北京 100124
纸质出版日期:2019-5-5,
网络出版日期:2018-9-17,
收稿日期:2018-5-21,
修回日期:2018-9-8,
扫 描 看 全 文
周广正, 兰天, 李颖等. 高温稳定25 Gbit/s 850 nm垂直腔面发射激光器[J]. 发光学报, 2019,40(5): 630-634
ZHOU Guang-zheng, LAN Tian, LI Ying etc. High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2019,40(5): 630-634
周广正, 兰天, 李颖等. 高温稳定25 Gbit/s 850 nm垂直腔面发射激光器[J]. 发光学报, 2019,40(5): 630-634 DOI: 10.3788/fgxb20194005.0630.
ZHOU Guang-zheng, LAN Tian, LI Ying etc. High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2019,40(5): 630-634 DOI: 10.3788/fgxb20194005.0630.
通过在N型分布布拉格反射镜(DBR)中采用高热导率AlAs材料,且增加AlAs层所占的厚度比例,在保持DBR反射率基本不变的情况下,大幅度增加了N型DBR的热导率,提高了器件高温工作性能。制作了氧化限制型顶发射VCSEL器件,不同温度条件下的直流测试结果表明:25 ℃时热反转功率超过8 mW;85 ℃ 时热反转电流为11 mA,功率达5 mW,表现出较好的高温工作特性。远场发散角小于17。0~70 ℃的温度条件下眼图都较清晰,表明器件满足高温25 Gbit/s工作要求。
By using the material of AlAs with high thermal conductivity in the n-type distributed Bragg reflector (DBR) and increasing the thickness ratio of the AlAs layer
the thermal conductivity of N-side DBR was greatly increased and the high temperature performance of the device was improved. VCSELs devices were produced
and the results of DC test under different temperature conditions showed that the maximum thermal rollover optical output power was 9 mW at 25℃
and the maximum optical output power of 5 mW was achieved at a thermal rollover current of 11 mA at 85℃
showing high DC performance of high temperature operation. The far field divergence angle was less than 17. Eye diagrams were clear under different temperature conditions varying from 0℃ to 70℃
indicating that the devices met the requirements of high temperature 25 Gbit/s operation.
分布布拉格反射镜垂直腔面发射激光器量子阱金属有机物化学气相淀积
distributed Bragg reflectorvertical cavity surface emitting lasersquantum wellmetal-organic chemical vapor deposition
MOSER P,WOLF P,MUTIG A,et al.. 85℃ error-free operation at 38 Gb/s of oxide-confined 980-nm vertical-cavity surface-emitting lasers[J]. Appl. Phys. Lett., 2012,100(8):081103-1-3.
WESTBERGH P,GUSTAVSSON J S,KGEL B,et al.. Impact of photon lifetime on high-speed VCSEL performance[J]. IEEE J. Sel. Top. Quantum Electron., 2011,17(6):1603-1613.
李惠,贾晓卫,魏泽坤,等. 高速光通讯面发射激光器的热分析及优化[J]. 发光学报, 2017,38(11):1516-1522. LI H,JIA X W,WEI Z K,et al.. Thermal analysis and structure optimization of high-speed optical communication-VCSEL[J]. Chin. J. Lumin., 2017,38(11):1516-1522. (in Chinese)
竹内哲也. 包含多层反射器的光学设备和垂直腔面发射激光器:中国,CN101132118[P]. 2008-02-27. TAKEUCHI T. Optical device including multilayer reflector and vertical cavity surface emitting laser:China,CN101132118[P]. 2008-02-27. (in Chinese)
张永明,钟景昌,赵英杰,等. 850 nm氧化物限制型VCSEL的温度特性[J]. 半导体学报, 2005,26(5):1024-1027. ZHANG Y M,ZHONG J C,ZHAO Y J,et al.. Temperature characteristics of 850 nm oxide confined VCSELs[J]. Chin. J. Semicond., 2005,26(5):1024-1027. (in Chinese)
张星,张奕,张建伟,等. 894 nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用[J]. 物理学报, 2016,65(13):134204-1-9. ZHANG X,ZHANG Y,ZHANG J W,et al.. 894 nm high temperature operating vertical-cavity-surface-emitting laser and its application in Cs chip-scale atomic-clock system[J]. Acta Phys. Sinica, 2016,65(13):134204-1-9. (in Chinese)
张建伟,宁永强,张星,等. 增益-腔模失配型高温工作垂直腔面发射半导体激光器[J]. 中国激光, 2013,40(5):0502001-1-8. ZHANG J W,NING Y Q,ZHANG X,et al.. Gain-cavity mode detuning vertical cavity surface emitting laser operating at the high temperature[J]. Chin. J. Lasers, 2013,40(5):0502001-1-8. (in Chinese)
AFROMOWITZ M A. Thermal conductivity of Ga1-xAlxAs alloys[J]. J. Appl. Phys., 1973,44(3):1292-1294.
BLOKHIN S A,BOBROV M A,MALEEV N A,et al.. Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning[J]. Appl. Phys. Lett., 2014,105(6):061104-1-5.
CHI K L,YEN J L,WUN J M,et al.. Strong wavelength detuning of 850 nm vertical-cavity surface-emitting lasers for high-speed (>40 Gbit/s) and low-energy consumption operation[J]. IEEE J. Sel. Top. Quantum Electron., 2015,21(6):470-479.
LARISCH G,MOSER P,LOTT J A,et al.. Large bandwidth,small current density,and temperature stable 980-nm VCSELs[J]. IEEE J. Quantum Electron., 2017,53(6):2400908-1-8.
吕朝晨,王青,尧舜,等. 415 Gbit/s 850 nm垂直腔面发射激光器列阵[J]. 光学学报, 2018,38(5):0514001-1-7. LV Z C,WANG Q,YAO S,et al.. 415 Gbit/s 850 nm vertical cavity surface emitting laser array[J]. Acta Opt. Sinica, 2018,38(5):0514001-1-7. (in Chinese)
COLDREN L A,CORZINE S W,MAANOVIC M L.Diode Lasers and Photonic Integrated Circuits[M]. 2nd ed. New York:John Wiley & Sons, 2012.
0
浏览量
72
下载量
6
CSCD
关联资源
相关文章
相关作者
相关机构