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1. 南昌大学 前湖学院,江西 南昌,330001
2. 南昌大学 江西省轻质高强结构材料重点实验室, 江西 南昌 330001
3. 南昌大学 材料科学与工程学院,江西 南昌,330001
纸质出版日期:2019-5-5,
网络出版日期:2018-9-26,
收稿日期:2018-6-27,
修回日期:2018-12-2,
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吴梅虹, 罗岚, 郭锐等. 新型Ba<sub>3</sub>SiO<sub>5</sub>∶Eu荧光粉的合成及光谱性质[J]. 发光学报, 2019,40(5): 610-615
WU Mei-hong, LUO Lan, GUO Rui etc. Synthesis and Photoluminescent Properties of Ba<sub>3</sub>SiO<sub>5</sub>:Eu Phosphor[J]. Chinese Journal of Luminescence, 2019,40(5): 610-615
吴梅虹, 罗岚, 郭锐等. 新型Ba<sub>3</sub>SiO<sub>5</sub>∶Eu荧光粉的合成及光谱性质[J]. 发光学报, 2019,40(5): 610-615 DOI: 10.3788/fgxb20194005.0610.
WU Mei-hong, LUO Lan, GUO Rui etc. Synthesis and Photoluminescent Properties of Ba<sub>3</sub>SiO<sub>5</sub>:Eu Phosphor[J]. Chinese Journal of Luminescence, 2019,40(5): 610-615 DOI: 10.3788/fgxb20194005.0610.
以BaCO
3
、SiO
2
、Eu
2
O
3
为原料在还原气氛下采用高温固相法制备了Ba
3
SiO
5
∶Eu荧光粉体。实验结果表明,制备Ba
3
SiO
5
的最佳工艺条件是Ba/Si比为3,1 200 ℃保温4 h。光谱分析表明,Ba
3
SiO
5
∶Eu荧光粉在254,365,410 nm激发下发射主峰为566 nm(Eu
2+
的4f
n
-1
5d4f
n
)宽带发射,量子效率分别为70%、50%、10%,荧光寿命为百纳秒级;以566 nm为监视波长测得激发谱为主峰在250~450 nm范围内的宽带发射,主峰为360 nm,且在410 nm出现小峰; Eu离子最佳掺杂浓度为5%,由发光强度随掺杂离子浓度变化曲线,可以得出Ba
3
SiO
5
中Eu离子能量传递是基于电四级-电四级作用。
Ba
3
SiO
5
:Eu phosphor was synthesized by solid-state reaction method at a mild reducing atmosphere. BaCO
3
SiO
2
Eu
2
O
3
were the raw materials. The results show that the optimized fabrication condition for Ba
3
SiO
5
is that Ba/Si atomic ratio should equal to 3
annealed temperature should be 1 200℃. Under 254
365
410 nm excitation
Ba
3
SiO
5
:Eu phosphor would give out broadband emission(centered at 566 nm
related to Eu ion 4f
n
-1
5d4f
n
)
and the absolute PL quantum yields are 70%
50%
10% respectively. The photoluminescent lifetime is 10
2
ns. The excitation monitored by 566 nm has a broadband emission in the range of 250-450 nm centered at 360 nm
with a small peak at 410 nm. The optimal Eu dopant content is 5%. From the curve of luminescent intensity
vs
. dopant content
the energy transfer way of activator in Ba
3
SiO
5
can be deduced as electric quadrupole-quadrupole interaction.
硅酸钡盐铕离子高温固相反应法光谱分析能量传递
barium silicatecesium ionshigh temperature solid-state methodphotoluminescent spectraenergy transfer
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尚进. 白光LED用Sr3-yEuySiO5-6xN4x荧光粉的制备与发光性能[D]. 成都:成都理工大学, 2013. SHANG J. The Preparation and Luminescence Properties of A White Light-emitting Diodes Used Phosphor Sr3-yEuySiO5-6xN4x[D]. Chengdu:Chengdu University of Technology, 2013. (in Chinese)
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LAWRENCE T A,MURRA K A,MAY P S. Temperature dependence of rate constants for Tb3+ (5D3) cross relaxation in symmetric Tb3+ pairs in Tb-doped CsCdBr3,CsMgBr3,CsMgCl3[J]. J. Phys. Chem. B, 2003,107(17):4002-4011.
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