氮化镓基绿光LED中V坑对空穴电流分布的影响

许毅; 吴庆丰; 周圣军; 潘拴; 吴小明; 张建立; 全知觉

doi:10.3788/fgxb20183905.0674

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氮化镓基绿光LED中V坑对空穴电流分布的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 氮化镓基绿光LED中V坑对空穴电流分布的影响
- Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED
- 发光学报 2018年39卷第5期页码：674-680
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心, 江西南昌 330047
  2. 武汉大学动力与机械学院, 湖北武汉 430072
- 作者简介：
- 基金信息：
  
  国家自然科学基金（11674147，11364034，21405076，11604137，51602141）();江西省自然科学基金（20161BAB201011）()
- DOI：10.3788/fgxb20183905.0674
  中图分类号： O484.4;O482.31
- 纸质出版日期：2018-5-5，
  
  网络出版日期：2017-11-7，
  
  收稿日期：2017-9-12，
  
  修回日期：2017-10-21，
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许毅, 吴庆丰, 周圣军等. 氮化镓基绿光LED中V坑对空穴电流分布的影响[J]. 发光学报, 2018,39(5): 674-680

XU Yi, WU Qing-feng, ZHOU Sheng-jun etc. Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED[J]. Chinese Journal of Luminescence, 2018,39(5): 674-680
许毅, 吴庆丰, 周圣军等. 氮化镓基绿光LED中V坑对空穴电流分布的影响[J]. 发光学报, 2018,39(5): 674-680 DOI： 10.3788/fgxb20183905.0674.

XU Yi, WU Qing-feng, ZHOU Sheng-jun etc. Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED[J]. Chinese Journal of Luminescence, 2018,39(5): 674-680 DOI： 10.3788/fgxb20183905.0674.

摘要

采用实验与理论模拟相结合的方法，研究了氮化镓基绿光发光二极管（LED）中V坑对空穴电流分布的影响。首先，实验获得了V坑面积占比不同的3种样品；然后，建立数值模型，使得理论计算的外量子效率（EQE）及电压与实验测试的变化趋势相匹配，从而确立了所用数值模型的可信性。计算结果显示：V坑改变了空穴电流的分布，空穴电流密度在V坑处显著增加，在平台处明显减小。进一步的分析表明：V坑面积占比在0~10%范围内，V坑空穴电流占比与V坑面积占比之间呈近线性增长（斜率为2.06），但V坑空穴注入在整个空穴注入的过程中仍未占主导。

Abstract

The effect of V-shaped pit hole current distributionin GaN based green LED was experimentally and theoretically investigated. First

three LED samples were prepared by experiment

which V-shaped pit area ratio was different. Then

a numerical model was established to match the external quantum efficiency(EQE) and the voltage of the theoretical calculation with the trend of the experimental test

thus the credibility of the numerical model was established. Calculation results show that the V-shaped pit changes the distribution of hole current

the hole current density increases significantly in the V-shaped pit

and reduces significantly at the platform. Further

the analysis shows that the hole current ratio in the V-shaped pit shows a near linear increase with the V-shaped pit area ratio(slope is 2.06) when the V-shaped pit area ratio is in the range of 0-10%

while the V-shaped pit hole injection has not yet dominated the whole hole injection process.

关键词

V坑氮化镓绿光LED空穴电流分布

Keywords

V-shaped pitsGaNgreen LEDhole current distribution

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