1. 西安邮电大学 电子工程学院, 陕西 西安 710121
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武利翻, 苗瑞霞, 商世广. 高灵敏度Sb基量子阱2DEG的霍尔器件[J]. 发光学报, 2018,39(5): 687-691
WU Li-fan, MIAO Rui-xia, SHANG Shi-guang. Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device[J]. Chinese Journal of Luminescence, 2018,39(5): 687-691
武利翻, 苗瑞霞, 商世广. 高灵敏度Sb基量子阱2DEG的霍尔器件[J]. 发光学报, 2018,39(5): 687-691 DOI: 10.3788/fgxb20183905.0687.
WU Li-fan, MIAO Rui-xia, SHANG Shi-guang. Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device[J]. Chinese Journal of Luminescence, 2018,39(5): 687-691 DOI: 10.3788/fgxb20183905.0687.
用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比,室温下器件电子迁移率从15 000 cm,2,V,-1,s,-1, 提高到16 000 cm,2,V,-1,s,-1,。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构。双掺杂结构形成高灵敏度、高二维电子气(2DEG)浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。
The highly sensitive Hall device made of InAs/AlSb quantum-well structures pseudomorphically grown on the GaAs substrate by molecular beam epitaxy has been developed. The advanced InAs/AlSb Hall device includes double -doped layers, which significantly elevate the sheet electron density. Moreover, electron mobility is increased from 15 000 cm ,2,V,-1,s,-1, to 16 000 cm,2,V,-1,s,-1, at room temperature, compared with that of an unintentionally doped AlSb/InAs Hall device. AFM measurement results show a smooth surface morphology and high crystalline quality of the samples. The quantum Hall device can be operated in the temperature ranging from 77 K to 300 K. Hall measurements show different scattering mechanism on electron mobility at temperature range. The advanced highly-sensitive InAs/AlSb heterostructure two-dimensional electron gases(2DEG) Hall device including double -doped layers is promising in near future.
霍尔器件量子阱双&delta掺杂分子束外延
Hall devicequantum welldouble &delta-dopingmolecular beam epitaxy
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