1. 中国工程物理研究院 材料研究所, 四川 江油,621907
2. 哈尔滨工业大学材料科学与工程学院,黑龙江 哈尔滨,150001
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陈道明, 国凤云, 张新建等. InAs/GaInSb超晶格薄膜结构与电学性能[J]. 发光学报, 2015,36(11): 1252-1257
CHEN Dao-ming, GUO Feng-yun, ZHANG Xin-jian etc. Structure and Electrical Properties of InAs/GaInSb Superlattice Film[J]. Chinese Journal of Luminescence, 2015,36(11): 1252-1257
陈道明, 国凤云, 张新建等. InAs/GaInSb超晶格薄膜结构与电学性能[J]. 发光学报, 2015,36(11): 1252-1257 DOI: 10.3788/fgxb20153611.1252.
CHEN Dao-ming, GUO Feng-yun, ZHANG Xin-jian etc. Structure and Electrical Properties of InAs/GaInSb Superlattice Film[J]. Chinese Journal of Luminescence, 2015,36(11): 1252-1257 DOI: 10.3788/fgxb20153611.1252.
采用分子束外延(MBE)方法, 调节生长温度、Ⅴ/Ⅲ束流比等参数在(001)GaAs衬底上生长了InAs/GaInSb超晶格薄膜.结果表明:InAs/GaInSb超晶格薄膜的最佳生长温度在385~395 ℃, Ⅴ/Ⅲ束流比为5.7 :1~8.7 :1.高能电子衍射仪(RHEED)原位观测到清晰的GaAs层(42)、GaSb层(13)和InAs层(12)再构衍射条纹.获得的超晶格薄膜结构质量较好.随着温度的升高, 材料的载流子浓度和迁移率均上升.
InAs/GaInSb superlattice material was grown on (001)GaAs substrates by molecular beam epitaxy (MBE), adjusting the growth temperature and Ⅴ/Ⅲ beam ratio. The results show that the growth temperature is in the range of 385 ℃ and 395 ℃, the Ⅴ/Ⅲ beam ratio is from 5.7 :1 to 8.7 :1. RHEED ,situ, observations to the GaAs layer (42), GaSb layer (13) and InAs layer (12) show clarity reconstructed diffraction fringes, the quality of superlattice structure is better, and with increasing temperature, the carrier concentration and mobility of the material are increased.
InAs/GaInSb超晶格薄膜分子束外延
InAs/GaInSbsuperlattice filmmolecular beam epitaxy
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