新型复合盖层延伸波长InGaAs红外探测器结构优化设计

赵旭; 缪国庆; 张志伟; 曾玉刚

doi:10.3788/fgxb20153601.0075

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新型复合盖层延伸波长InGaAs红外探测器结构优化设计

器件制备及器件物理 | 更新时间：2020-08-12

- 新型复合盖层延伸波长InGaAs红外探测器结构优化设计
- Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector
- 发光学报 2015年36卷第1期页码：75-79
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  "();973"();国家重点基础研究发展计划(2012CB619201)资助项目()
- DOI：10.3788/fgxb20153601.0075
  中图分类号： O472.3
- 纸质出版日期：2015-1-3，
  
  收稿日期：2014-8-12，
  
  修回日期：2014-9-11，
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赵旭, 缪国庆, 张志伟等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015,36(1): 75-79

ZHAO Xu, MIAO Guo-qing, ZHANG Zhi-wei etc. Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector[J]. Chinese Journal of Luminescence, 2015,36(1): 75-79
赵旭, 缪国庆, 张志伟等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015,36(1): 75-79 DOI： 10.3788/fgxb20153601.0075.

ZHAO Xu, MIAO Guo-qing, ZHANG Zhi-wei etc. Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector[J]. Chinese Journal of Luminescence, 2015,36(1): 75-79 DOI： 10.3788/fgxb20153601.0075.

摘要

设计并模拟计算了延伸波长至2.6 m的复合盖层材料PIN结构In

0.82

0.18

As红外探测器

即PNN型盖层、PIN结构的In

0.82

0.18

As红外探测器。研究了不同厚度及载流子浓度的PNN盖层对探测器性能的影响。研究结果表明:在In

0.82

0.18

As厚度为200 nm且载流子浓度为2E18、InAs

0.6

0.4

厚度为50 nm且载流子浓度为2E17、In

0.82

0.18

As厚度为50 nm且载流子浓度为2E16时

探测器表现出最佳的性能。与传统PIN结构探测器相比

其相对光谱响应度仅降低10%

暗电流降低了1个数量级。计算分析了不同工作温度下的暗电流

结果显示:在120~250 K时

暗电流主要为缺陷隧穿电流;在250~300 K时

暗电流主要为带间隧穿电流;当温度大于300 K时

暗电流主要为产生-复合电流和扩散电流。

Abstract

The near-infrared detector of In

0.82

0.18

As with PIN structure was designed and simulated by APSYS. The long-wave cutoff wavelength was extended to 2.6 m. Three doped layers were deposited on the absorption layer

which contained P type N type

N type and by growth order. The thickness and concentration of each doped layer in cap layer were analyzed. The results show that In

0.82

0.18

InAs

0.6

0.4

and In

0.82

0.18

As layers by growth order are determined to obtain the excellent performance. The relative spectral responsivity of the detector keeps almost the same

and dark current decreases by one magnitude compared with the PIN structure. The defect tunneling current predominates when the detector works at 120-250 K

the inter-band tunneling current dominates the dark current when the detector works at 250-300 K

and the G-R current and diffusion current dominates the dark current when the detector works above 300 K.

关键词

红外探测器APSYS盖层光谱响应度暗电流

Keywords

infrared detectorAPSYScap layerresponsivitydark current

references

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Forrest S R, DiDomenico M, Smith R G, et al. Evidence for tunneling in reverse-biased Ⅲ-Ⅴ photodetector diodes [J]. Appl. Phys. Lett., 1980, 36(7):580-582.

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