氮化铝薄膜的硅热扩散掺杂研究

王新建; 宋航; 黎大兵; 蒋红; 李志明; 缪国庆; 陈一仁; 孙晓娟

doi:10.3788/fgxb20123307.0768

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氮化铝薄膜的硅热扩散掺杂研究

器件制备及器件物理 | 更新时间：2020-08-12

- 氮化铝薄膜的硅热扩散掺杂研究
- Study of AlN Films Doped by Si Thermal Diffusion
- 发光学报 2012年33卷第7期页码：768-773
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 发光学与应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072196,51072195)资助项目()
- DOI：10.3788/fgxb20123307.0768
  中图分类号： O484.1
- 纸质出版日期：2012-7-10，
  
  网络出版日期：2012-7-10，
  
  收稿日期：2012-3-28，
  
  修回日期：2012-5-7，
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王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究[J]. 发光学报, 2012,33(7): 768-773

WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-jun. Study of AlN Films Doped by Si Thermal Diffusion[J]. Chinese Journal of Luminescence, 2012,33(7): 768-773
王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究[J]. 发光学报, 2012,33(7): 768-773 DOI： 10.3788/fgxb20123307.0768.

WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-jun. Study of AlN Films Doped by Si Thermal Diffusion[J]. Chinese Journal of Luminescence, 2012,33(7): 768-773 DOI： 10.3788/fgxb20123307.0768.

摘要

采用热扩散方法

对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明:在1 250 ℃的温度下

氮化硅(SiN

)作为Si的扩散源

可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明:在460 ℃测试温度下

AlN薄膜在热扩散掺杂以后

其电导从1.9×10

-3

S·m

-1

增加到2.1×10

-2

S·m

-1

。高温变温电导测试表明:氮空位(V

)和Si在AlN中的激活能为1.03 eV和0.45 eV。

Abstract

This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion. The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity. The results of EDS show that the Si element is successfully doped into the AlN films using SiN

as the diffusion source at the temperature of 1 250 ℃. The high-temperature current-voltage (I-V) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion

and at the measured temperature of 460 ℃ their electrical conductivities increase from 1.9×10

-3

S·m

-1

to 2.1×10

-2

S·m

-1

after the Si thermal diffusion. The high-temperature dependence of thermal conductivity suggests that the activation energies of V

and Si are about 1.03 eV and 0.45 eV

respectively.

关键词

杂质氮化物热扩散

Keywords

impuritiesnitridesthermal diffusion

references

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