1 060 nm高功率垂直腔面发射激光器的有源区设计

张立森; 宁永强; 曾玉刚; 张艳; 秦莉; 刘云; 王立军; 曹军胜; 梁雪梅

doi:10.3788/fgxb20123307.0774

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1 060 nm高功率垂直腔面发射激光器的有源区设计

器件制备及器件物理 | 更新时间：2020-08-12

- 1 060 nm高功率垂直腔面发射激光器的有源区设计
- Design of Active Region for Watt-level VCSEL at 1 060 nm
- 发光学报 2012年33卷第7期页码：774-779
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
  3. 吉林农业大学信息技术学院,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10974012,11074247,61106047,61176045,61106068,51172225,61006054)();国家自然科学基金重
- DOI：10.3788/fgxb20123307.0774
  中图分类号：
- 纸质出版日期：2012-7-10，
  
  网络出版日期：2012-7-10，
  
  收稿日期：2011-4-13，
  
  修回日期：2011-5-23，
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张立森, 宁永强, 曾玉刚, 张艳, 秦莉, 刘云, 王立军, 曹军胜, 梁雪梅. 1 060 nm高功率垂直腔面发射激光器的有源区设计[J]. 发光学报, 2012,33(7): 774-779

ZHANG Li-sen, NING Yong-qiang, ZENG Yu-gang, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun, CAO Jun-sheng, LIANG Xue-mei. Design of Active Region for Watt-level VCSEL at 1 060 nm[J]. Chinese Journal of Luminescence, 2012,33(7): 774-779
张立森, 宁永强, 曾玉刚, 张艳, 秦莉, 刘云, 王立军, 曹军胜, 梁雪梅. 1 060 nm高功率垂直腔面发射激光器的有源区设计[J]. 发光学报, 2012,33(7): 774-779 DOI： 10.3788/fgxb20123307.0774.

ZHANG Li-sen, NING Yong-qiang, ZENG Yu-gang, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun, CAO Jun-sheng, LIANG Xue-mei. Design of Active Region for Watt-level VCSEL at 1 060 nm[J]. Chinese Journal of Luminescence, 2012,33(7): 774-779 DOI： 10.3788/fgxb20123307.0774.

摘要

对1 060 nm高功率垂直腔面发射激光器的有源区进行了理论计算和设计。对比了GaAsP、GaAs和AlGaAs三种不同材料的垒层所组成的高应变InGaAs量子阱的性能。为了确定有源区阱层和垒层的参数

考虑了自热效应对功率的影响

使得模型更加精确可靠。发现所设计的In

0.28

0.72

As量子阱的阱宽和阱数的最佳值分别为9 nm和3个

输出功率可以达到瓦级。另外

对比了三种不同垒层的温度特性

结果显示

使用GaAsP垒层的器件在高温下具有更高的功率和更好的温度稳定性。最后

利用MOCVD生长了InGaAs/GaAsP量子阱并测试了其PL谱

实验数据与理论结果符合得很好。

Abstract

The active region of high power VCSEL at 1 060 nm is calculated and designed. The performances of highly-strained InGaAs quantum wells with GaAsP

GaAs and AlGaAs barriers are compared. A comprehensive model taking self-heating effect into consideration is presented to determine the parameters of quantum well and barrier. It is found that the best value of width and number of In

0.28

0.72

As quantum wells in our design is 9 nm and 3

respectively. And high output power up to Watt-level is achieved. In addition

the temperature performances are also compared among the three different barriers

which show that the devices with GaAsP barriers have higher output power and better temperature stability. Finally

the InGaAs/GaAsP QWs are grown used MOCVD and the PL spectrum is tested

the experimental data agrees with the theoretical results very well.

关键词

垂直腔面发射激光器1 060 nm瓦级InGaAs

Keywords

vertical-cavity surface-emitting laser1 060 nmWatt-levelInGaAs

references

Zhang Y, Ning Y Q, Qin L, et al. Design and fabrication of vertical-cavity surface-emitting laser with small divergence [J]. Chin. J. Lumin.(发光学报), 2011, 32(1):47-52 (in Chinese).

Shi J J, Qin L, Ning Y Q, et al. Coherent measurement and analysis of vertical-cavity surface-emitting laser [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):834-838 (in Chinese).

Wang Z F, Ning Y Q, Zhang Y, et al. High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array [J]. Opt. Express, 2010, 18(23):23900-1-6.

Shchegrov A V, Umbrasas A, Watson J P, et al. 532 nm laser sources based on intracavity frequency doubling of extended cavity surface-emitting diode lasers [J]. SPIE, 2004, 5332:151-156.

Hou H Q, Choquette K D, Geib K M, et al. High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells [J]. IEEE Photonics Technol. Lett., 1997, 9(8):1057-1059.

Hatakeyama H, Anan T, Akagawa T, et al. Highly reliable high-speed 1.1-μm-range VCSELs With InGaAs/GaAsP-MQWs [J]. IEEE J. Quantum Electron., 2010, 46(6):890-897.

Yu S F. Analysis and Design of Vertical Cavity Surface Emitting Laser [M]. Hoboken: Wiley-Interscience, 2003:47-82.

Minch J, Park S H, Keating T, et al. Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers [J]. IEEE J. Quantum Electron., 1999, 35(5):771-782.

Matthews J W, Blakeslee A E. Defects in epitaxial multilayers: I. Misfit dislocations [J]. J. Crystal Growth, 1974, 27(1):118-125.

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