氩气退火对氢掺杂AZO薄膜电学性能的影响

石素君; 朱德亮; 吕有明; 曹培江; 柳文军; 贾芳; 马晓翠

doi:10.3788/fgxb20123307.0742

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氩气退火对氢掺杂AZO薄膜电学性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 氩气退火对氢掺杂AZO薄膜电学性能的影响
- Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films
- 发光学报 2012年33卷第7期页码：742-746
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976036)();深圳市科技研发基金(JC201005280386A)资助项目()
- DOI：10.3788/fgxb20123307.0742
  中图分类号： O472.4;O484.4
- 纸质出版日期：2012-7-10，
  
  网络出版日期：2012-7-10，
  
  收稿日期：2012-2-28，
  
  修回日期：2012-5-17，
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石素君, 朱德亮, 吕有明, 曹培江, 柳文军, 贾芳, 马晓翠. 氩气退火对氢掺杂AZO薄膜电学性能的影响[J]. 发光学报, 2012,33(7): 742-746

SHI Su-jun, ZHU De-liang, LV You-ming, CAO Pei-jiang, LIU Wen-jun, JIA Fang, MA Xiao-cui. Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films[J]. Chinese Journal of Luminescence, 2012,33(7): 742-746
石素君, 朱德亮, 吕有明, 曹培江, 柳文军, 贾芳, 马晓翠. 氩气退火对氢掺杂AZO薄膜电学性能的影响[J]. 发光学报, 2012,33(7): 742-746 DOI： 10.3788/fgxb20123307.0742.

SHI Su-jun, ZHU De-liang, LV You-ming, CAO Pei-jiang, LIU Wen-jun, JIA Fang, MA Xiao-cui. Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films[J]. Chinese Journal of Luminescence, 2012,33(7): 742-746 DOI： 10.3788/fgxb20123307.0742.

摘要

采用射频磁控溅射法

在石英玻璃衬底上制备出了性能良好的H掺杂AZO透明导电薄膜

通过XRD、Hall、UV-Vis等测试手段

研究了氩气气氛中退火温度对薄膜电学热稳定性的影响。实验结果显示

随着退火温度的升高

薄膜中载流子的浓度和迁移率下降。分析认为

这与薄膜中氢的逸出密切相关。

Abstract

HAZO films were prepared on quartz substrates by RF magnetron sputtering in Ar+H

gas ambient at room temperature. The effects of post-annealing in pure Ar atmosphere on the structural

optical and electrical properties of the HAZO films were investigated. It was found that post-annealing treatment was beneficial to crystallization of HAZO thin films

while caused a large degradation of the conductivity. The increase in the resistivity of HAZO thin films was attributed to the doped hydrogen atoms diffuse out after annealing. It was showed that interstitial hydrogen atoms (H

) and substitutional hydrogen atoms (H

) at an O site removed from films

as well as the effect of H passivating deep acceptors and dangling bonds gradually eliminated as the heating temperature was increased.

关键词

H掺杂AZO薄膜氩气退火热稳定性Hall测试

Keywords

HAZO filmspost-annealing treatmentthermal stabilityhall effect

references

van de Walle C G. Hydrogen as a cause of doping in zinc oxide [J]. Phys. Rev. Lett., 2000, 85(5):1012-1015.

Lavrov E, Weber J, van de Walle C G, et al. Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy [J]. Phys. Rev. B, 2002, 66(16):165205-1-7.

Janotti A, van de Walle C G. Hydrogen multicentre bonds [J]. Nature Materials, 2007, 6(1):44-47.

Li Y J, Kasper T C, Droubay T C, et al. Electronic properties of H and D doped ZnO epitaxial films [J]. Appl. Phys. Lett., 2008, 92(15):152105-1-3.

Li Y J, Kasper T C, Droubay T C, et al. A study of H and D doped ZnO epitaxial films grown by pulsed laser deposition [J]. J. Appl. Phys., 2008, 104(5):053711-1-7.

Liu W W, Yao B, Li Y F, et al. Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient: A comparative study [J]. Thin Solid Films, 2010, 518(14):3923-3928.

Duenow J N, Gessert T A, Wood D M, et al. Effects of hydrogen ambient and film thickness on ZnO∶Al properties [J]. J. Vac. Sci. Technol. A, 2008, 26(4):692-696.

Ahn K, Jeong Y S, Lee H U, et al. Physical properties of hydrogenated Al-doped ZnO thin layer treated by atmospheric plasma with oxygen gas [J]. Thin Solid Films, 2010, 518(14):4066-4070.

Zhang X, Liu Y Z, Kang C Y, et al. Effects of annealing atmosphere and temperature on the structure and photoluminescence of ZnO films prepared by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2010, 31(5):613-618 (in Chinese).

Lee S H, Lee T S, Lee K S, et al. Effect of heat treatment of sputter deposited ZnO films co-doped with H and Al [J]. J. Electroceram, 2009, 23(2-4):468-473.

Park Y R, Kim J, Kim Y S. Effect of hydrogen doping in ZnO thin films by pulsed DC magnetron sputtering [J]. Appl. Surf. Sci., 2009, 255(22):9010-9014.

Bang J, Chang K J. Diffusion and thermal stability of hydrogen in ZnO [J]. Appl. Phys. Lett., 2008, 92(13):132109-1-3.

Lavrov E, Herklotz F, Weber J. Identification of two hydrogen donors in ZnO [J]. Phys. Rev. B, 2009, 79(16):165210-1-13.

Zhang H, Shen H L, Yin Y G, et al. Effects of substrate temperature and hydrogen annealing on properties of ZnO∶Al films [J]. Chinese Journal of Vacuum Science and Technology (真空科学与技术学报), 2010, 30(1):72-75 (in Chinese).

Tauc J, Grigorocivi R, Vancu A. Optical properties and electronic structure of amorphous germanium [J]. Physics State Solid, 1966, 15(2):627-637.

Tanenbaum M. Optical properties of indium antimonide [J]. Phys. Rev., 1953, 91(6):1561-1562.

Burstein E. Anomalous optical absorption limit in InSb [J]. Phys. Rev., 1954, 93(3):632-633.

Sernelius B E, Berggren K F, Jin Z C, et al. Band-gap tailoring of ZnO by means of heavy Al doping [J]. Phys. Rev. B, 1988, 37(17):10244-1-5.

Kim K H, Park K C, Ma D Y. Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering [J]. J. Appl. Phys., 1997, 81(12):7764-1-9.

Choi B H, Im H B, Yoon K H. Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering [J]. Thin Solid Films, 1990, 193/194:712-720.

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