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1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
2. 中国科学院 研究生院 北京,100039
纸质出版日期:2012-6-10,
网络出版日期:2012-6-10,
收稿日期:2012-3-7,
修回日期:2012-4-26,
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徐华伟, 宁永强, 曾玉刚, 张星, 秦莉, 刘云, 王立军. 852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性[J]. 发光学报, 2012,(6): 640-646
XU Hua-Wei, NING Yong-Jiang, CENG Yu-Gang, ZHANG Xing, QIN Li, LIU Yun, WANG Li-Jun. Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 640-646
徐华伟, 宁永强, 曾玉刚, 张星, 秦莉, 刘云, 王立军. 852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性[J]. 发光学报, 2012,(6): 640-646 DOI: 10.3788/fgxb20123306.0640.
XU Hua-Wei, NING Yong-Jiang, CENG Yu-Gang, ZHANG Xing, QIN Li, LIU Yun, WANG Li-Jun. Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 640-646 DOI: 10.3788/fgxb20123306.0640.
为了提高852 nm半导体激光器的温度稳定性
理论计算了InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的增益
模拟对比并研究了不同量子阱的增益峰值和峰值波长随温度的漂移。结果显示
采用In
0.15
Ga
0.74
-Al
0.11
As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的温度稳定性。使用金属有机化学气相沉积(MOCVD)外延生长了压应变In
0.15
Ga
0.74
Al
0.11
As单量子阱852 nm半导体激光器
实验测得波长随温度漂移的数值为0.256 nm/K
实验测试结果验证了理论计算结果。
In order to enhance the temperature stability of 852 nm laser diode
the gain of InGaAlAs
InGaAsP
InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory
and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed. The results indicate that In
0.15
Ga
0.74
Al
0.11
As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously. Compressive-strained In
0.15
Ga
0.74
Al
0.11
As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition (MOCVD). The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K
the experimental results are in good agreement with theoretical calculation results.
激光器AlGaInAs量子阱数值模拟
lasersAlGaInAsquantum-wellnumerical simulation
Peng Biao, Ning Yongqiang, Qin Li, et al. Polarization characteristics of 980 nm high power vertical cavity surface emitting laser [J]. Chin. J. Lumin.(发光学报), 2008, 29(5):845-850 (in Chinese).[2] Zhang Yan, Ning Yongqiang, Qin Li, et al. Design and fabrication of vertical-cavity surface-emitting laser with small divergence [J]. Chin. J. Lumin.(发光学报), 2011, 32(1):47-52 (in Chinese).[3] Liang Xuemei, Lu Jinkai, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin. J. Lumin.(发光学报), 2010, 31(1):79-85 (in English).[4] Cayron C, Ligeret V, Resneau P, et al. Four level, atomic Cs laser at 852.1 nm with a quantum efficiency above 98%:Observation of three body photoassociation [J]. Appl. Phys. Lett., 2010, 97(2):021104-1-3.[5] Timmons B, Stoner R E. Radiation exposure of distributed-feedback lasers for use in atom trapping and atom interferometry [J]. Nuclear Science, 2011, 58(2):490-498.[6] Boutillier M, Gauthier-Lafaye O, Bonnefone S, et al. Strong electron irradiation hardness of 852 nm Al-free laser diodes [J]. Microelectronics Reliability, 2006, 46(9-11):1715-1719.[7] Vurgaftman I, Meyer J R, Rarn-Mohan L R, et al. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys [J]. J. Appl. Phys., 2001, 89(11):5815-5875.[8] Minch J, Park S H, Keating T, et al. Theory and experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers [J]. Quantum Electronics, 1999, 35(5):771-782.[9] Zhang P, Song Y R, Tian J R, et al. Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers [J]. J. Appl. Phys., 2009, 105(5):053103-1-8.[10] Chang C S, Chuang S L. Modeling of strained quantum-well lasers with spin-orbit coupling [J]. Quantum Electronics, 1995, 1(2):218-229.[11] Chris G, van de Walle. Band lineups and deformation potentials in the model-solid theory [J]. Phys. Rev. B, 1989, 39(3):1871-1883.[12] Yan Changling, Qin Li, Ning Yongqiang, et al. Calculation of energy band structure of GaInAs/ GaAs quantum well [J]. Laser Journal (激光杂志), 2004, 25(5):29-31 (in Chinese).[13] Bugge F, Zorn M, Zeimer V, et al. MOVPE growth of InGaAs/GaAsP-MQWs for high power laser diodes studied by reflectance anisotropy spectroscopy [J]. Journal of Crystal Growth, 2009, 311(4):1065-1069.[14] Xu Huawei, Zhang Jinlong, Ning Yongqiang, et al. In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1297-1302 (in English).[15] Zorn M, Weyers M. Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy [J]. J. Phys. D: Applied Physics, 2007, 40(3):878-882.
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