非等温模型下LED芯片性能与衬底的关系

王天虎; 徐进良; 王晓东

doi:10.3788/fgxb20123306.0616

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非等温模型下LED芯片性能与衬底的关系

器件制备及器件物理 | 更新时间：2020-08-12

- 非等温模型下LED芯片性能与衬底的关系
- Relationship Between Light-emitting Diode Performance and Different Substrates Working Under Non-isothermal Model
- 发光学报 2012年33卷第6期页码：616-623
- 作者机构：
  
  1. 华北电力大学新能源电力系统国家重点实验室北京,102206
  2. 华北电力大学低品位能源多相流与传热北京市重点实验室北京,102206
- 作者简介：
- 基金信息：
  
  国家自然科学基金-广东省联合重点基金(U1034004)();国家杰出青年基金(50825603)();中央高校基本科研业务费专项资金(11ZG01)资助项目()
- DOI：10.3788/fgxb20123306.0616
  中图分类号： TN312.8
- 纸质出版日期：2012-6-10，
  
  网络出版日期：2012-6-10，
  
  收稿日期：2012-3-19，
  
  修回日期：2012-4-10，
扫描看全文
王天虎, 徐进良, 王晓东. 非等温模型下LED芯片性能与衬底的关系[J]. 发光学报, 2012,(6): 616-623

WANG Tian-Hu, XU Jin-Liang, WANG Xiao-Dong. Relationship Between Light-emitting Diode Performance and Different Substrates Working Under Non-isothermal Model[J]. Chinese Journal of Luminescence, 2012,(6): 616-623
王天虎, 徐进良, 王晓东. 非等温模型下LED芯片性能与衬底的关系[J]. 发光学报, 2012,(6): 616-623 DOI： 10.3788/fgxb20123306.0616.

WANG Tian-Hu, XU Jin-Liang, WANG Xiao-Dong. Relationship Between Light-emitting Diode Performance and Different Substrates Working Under Non-isothermal Model[J]. Chinese Journal of Luminescence, 2012,(6): 616-623 DOI： 10.3788/fgxb20123306.0616.

摘要

发光二极管(LED)中载流子的输运及复合决定了其非均匀的内热源强度及分布

而芯片温度又影响载流子的输运及复合

两者具有强烈的耦合关系。本文利用非等温多物理场耦合模型对以蓝宝石、Si及SiC为衬底的 LED芯片的内量子效率、光谱特性及光电转换效率进行了系统研究。结果表明:以SiC为衬底的LED芯片具有最小的效率下垂效应(Efficiency droop)及最高的光谱强度和光电转换效率。这是因为与其他两种衬底的LED芯片相比

以SiC为衬底的LED芯片具有最好的散热性能

因此非均匀温度场对其载流子输运及复合的影响最小

使得活性区中的载流子浓度显著增强

漏电流明显下降。

Abstract

The carrier transport and recombination in light-emitting diodes (LEDs) determine the non-uniform intensity and distribution of the internal heat source. The non-uniform temperature field also influences the carrier transport and recombination in LEDs. Thus the carrier transport and recombination are strongly coupled with temperatures. In this paper

the internal quantum efficiency

spectrum characteristic and photoelectric conversion efficiency of LEDs with substrates of sapphire

Si and SiC are systematically studied by a non-isothermal multi-physics-field coupling model. It is shown that the LED with SiC substrate has the smallest efficiency droop effect and exhibits the highest spectrum intensity and photoelectric conversion efficiency

among the LEDs with substrates of sapphire

Si and SiC. This is because the LED with the substrate of SiC has the best thermal dissipation capability

thus the non-uniform temperature field has the smallest effect on the carrier transport and recombination

leading to the significantly enhanced carrier concentration in the active region and decreased current leakage.

关键词

发光二极管内量子效率衬底温度场

Keywords

light-emitting diodesinternal quantum efficiencysubstratetemperature field

references

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