LIN Juan, YANG Pei-Zhi, HUA Qi-Lin. Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films[J]. Chinese Journal of Luminescence, 2012,(6): 596-600
LIN Juan, YANG Pei-Zhi, HUA Qi-Lin. Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films[J]. Chinese Journal of Luminescence, 2012,(6): 596-600 DOI: 10.3788/fgxb20123306.0596.
) thin films were deposited by bipolar pulse reactive magnetron sputtering technique with different experiment parameters. Digital microscope and UV-Vis spectroscopy were used to study the surface structure and optics band gaps of the films. Confocal microscopy Raman spectrometer was used to study the Raman spectra of the silicon substrate
the as-deposited films and the annealed films. It is found that the films are Si-rich SiN
x
films and the most important influence factor on optics band gaps is the flow of nitrogen. The results of the Raman investigation show that the amorphous and crystalline silicon peaks appear in the film. After annealing
the amorphous silicon peaks were weakened or disappeared. It indicates that the crystallization appears in the film apparently. The shift of crystalline silicon peaks shows that silicon nanocrystals appear in the film
and the average size is about 6.6 nm.
关键词
富硅氮化硅薄膜磁控溅射紫外-可见光光谱拉曼光谱光学带隙
Keywords
SiNxreactive magnetron sputteringUV-Vis spectroscopyraman spectraoptics band gaps
references
Hezel R, Sshorner R. Plasma Si nitride——A promising dielectric to achieve high quality silicon MIS/IL solar cells [J].J. Appl. Phys., 1981, 52(4):3076-3079.[2] Park N M, Choi C J, Seong T Y, et al. Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride [J]. Phys. Rev. Lett., 2001, 86(7):1355-1357.[3] Taewook K, Chang H, Baekhyun K, et al. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH and NH [J]. Appl. Phys. Lett., 2006, 88(12):123102-1-3.[4] Hao H L, Wu L K, Shen W Z, et al. Origin of visible luminescence in hydrogenated amorphous silicon nitride [J]. Appl. Phys. Lett., 2007, 91(20):201922-1-3.[5] Taue J. Amorphous and Liquid Semiconductors [M]. Berlin:Springer Verlag, 1974:25-27.[6] Maley N, Lannin J S. Influence of hydrogen on vibrational and optical properties of a-Si1-xHx alloys [J]. Phys. Rev. B, 1987, 36(2):1146-1152.[7] Mercaldo, Veneri L V, Esposito P D, et al. Annealing effects on a-SiNx grown by PECVD using different gas mixtures [J]. Phys. Status Solid c, 2010, 7(3-4):832-835.[8] Cardona M, Guntherod. Light Scattering in Solid [M]. Berlin:Springer Verlag, 1980:42-48.[9] Ma Ziguang, Wang Wenxin, Wang Xiaoli, et al. The optical and electrical properties of GaN epitaxial films with SiNx interlayers inserted at different position [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1014-1019 (in Chinese).