1. 长春理工大学 高功率半导体激光国家重点实验室,吉林 长春,130022
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李再金, 芦鹏, 李特, 曲轶, 薄报学, 刘国军, 马晓辉. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012,(6): 647-650
LI Zai-jin, LU Peng, LI Te, QU Yi, BO Bao-xue, LIU Guo-jun, MA Xiao-hui. Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 647-650
李再金, 芦鹏, 李特, 曲轶, 薄报学, 刘国军, 马晓辉. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012,(6): 647-650 DOI: 10.3788/fgxb20123306.0647.
LI Zai-jin, LU Peng, LI Te, QU Yi, BO Bao-xue, LIU Guo-jun, MA Xiao-hui. Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 647-650 DOI: 10.3788/fgxb20123306.0647.
研究了1.06 μm InGaAs/InGaAsP量子阱半导体激光器厘米bar模块的温度特性,测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明,器件在15~55 ℃范围内所测的输出光功率由40.7 W降低到29.4 W,阈值电流由9.29 A升高到17.24 A,转换效率由54.22%降低到37.55%,光谱漂移为0.37 nm/℃,特征温度为68.6 K。实验结果表明,为保持器件性能的稳定,在实际应用过程中应该使器件的温度控制在15~25 ℃范围内。
The temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode was studied. The output optical power, threshold current, conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature. The results show that the module’s characteristic changes with the temperature in the range of 15 ℃ to 55 ℃. The module’s CW output optical power reduced from 40.7 W to 29.4 W. The threshold current increased from 9.29 A to 17.24 A. The conversion efficiency reduced from 54.22% to 37.55%. The lasing wavelength shift is 0.37 nm/℃ and the characteristic temperature is 68.6 K. The temperature of the device in the actual application process should be controlled in the range of 15 ℃ to 25 ℃ to maintain the stability of the device performance.
半导体激光器1.06 μm阈值电流温度特性
semiconductor laser1.06 μmthreshold currenttemperature characteristic
Zhu Hongbo, Liu Yun, Hao Mingming, et al. High efficiency module of fiber coupled diode laser [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1147-1151 (in Chinese).
Gu Yuanyuan, Feng Guangzhi, Deng Xinli, et al. 808 nm and 980 nm high power laser diode stack with wavelength coupling [J]. Optics and Precision Engineering (光学 精密工程), 2009, 17(1):8-13 (in Chinese).
Feng Guangzhi, Gu Yuanyuan, Shan Xiaonan, et al. 808 nm high power diode lase stack with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2009, 29(4):695-700 (in Chinese).
Pietrzak A, Crump P, Wenzel H, et al. High power 1 060 nm ridge waveguide lasers with low-index quantum barriers for narrow divergence angle //Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010, San Jose, USA:OSA, 2010:CWE2.
Ma Chunsheng, Guo Wenbin, Liu Shiyong. High temperature characteristics of 1.55 pm InGaAs/InGaAsP strain-compensated multiple quantum well lasers [J]. SPIE, 2001, 4602:173-177.
Qian Y, Hohl-AbiChedid A, Li J. High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications [J]. SPIE, 2002, 4905:37-46.
Tansu N, Mawst L J. Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers [J]. SPIE, 2002, 4646:302-312.
Kanazawa S, Takeda K, Miyamoto T, et al. High temperature operation of 1.2 μm single-transverse-mode highly strained GaInAs/GaAs QW laser [J]. SPIE, 2006, 6352:63520L-1-6.
Shinoda K, Makino S, Kitatani T, et al. Highly reliable operation of InGaAlAs/InGaAsP integrated lasers // 2007 International Conference on Indium Phosphide and Related Materials, Matsue, Japan:IEEE, 2007:39-42.
Hayakawa T, Akinaga F, Kuniyasu T, et al. Highly reliable and high power operation of 1.05 μm InGaAs/GaAsP strained compensated single quantum well laser diodes for pumping Tm-doped fiber amplifier //Optical Fiber Conf., 2002, Anaheim, CA, USA:IEEE, 2002:479-481.
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