ZHU Shun-ming, HUANG Shi-min, GU Shu-lin, ZHU Zhen-bang, GU Ran, ZHENG You-dou. Comparison The Effect of <em>t</em>-BuOH and H<sub>2</sub>O as O Precursors on ZnO Films Grown by MOCVD Method[J]. Chinese Journal of Luminescence, 2012,(6): 665-668
ZHU Shun-ming, HUANG Shi-min, GU Shu-lin, ZHU Zhen-bang, GU Ran, ZHENG You-dou. Comparison The Effect of <em>t</em>-BuOH and H<sub>2</sub>O as O Precursors on ZnO Films Grown by MOCVD Method[J]. Chinese Journal of Luminescence, 2012,(6): 665-668 DOI: 10.3788/fgxb20123306.0665.
The behaviors of ZnO films using ,t,-BuOH and H,2,O as oxygen precursors were investigated. Despite the fact that both ,t,-BuOH and H,2,O are of lower activity, the ZnO epilayer has a higher growth rate when ,t,-BuOH is used as oxygen precursor, due to its more effective prevention of the gas phase pre-reaction. Compared with H,2,O, ZnO epilayer get a better crystal quality by using ,t,-BuOH as oxygen precursor. And the Hall mobility up to 37.0 cm,2,稸,-1,穝,-1, is achieved in the flim where ,t,-BuOH is used as oxygen precursor. The research shows that ,t,-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.
关键词
ZnOMOCVD氧源t-BuOH
Keywords
ZnOMOCVDO precursort-BuOH
references
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