柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性

李晓妮; 方芳; 方铉; 陈新颖; 魏志鹏; 李金华; 楚学影; 王晓华

doi:10.3788/fgxb20123311.1232

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柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性

器件制备及器件物理 | 更新时间：2020-08-12

- 柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性
- The Optical and Electrical Properties of ZnO Films Grown on Flexible Substrate at Low Temperature by ALD
- 发光学报 2012年33卷第11期页码：1232-1235
- 作者机构：
  
  长春理工大学理学院,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61006065,61076039,61204065,61205193,10804071)();吉林省科技发展计划(20090139,20090555
- DOI：10.3788/fgxb20123311.1232
  中图分类号： O484.4
- 纸质出版日期：2012-11-10，
  
  收稿日期：2012-6-8，
  
  修回日期：2012-9-6，
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李晓妮, 方芳, 方铉, 陈新颖, 魏志鹏, 李金华, 楚学影, 王晓华. 柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性[J]. 发光学报, 2012,(11): 1232-1235

LI Xiao-ni, FANG Fang, FANG Xuan, CHEN Xin-ying, WEI Zhi-peng, LI Jin-hua, CHU Xue-ying, WANG Xiao-hua. The Optical and Electrical Properties of ZnO Films Grown on Flexible Substrate at Low Temperature by ALD[J]. Chinese Journal of Luminescence, 2012,(11): 1232-1235
李晓妮, 方芳, 方铉, 陈新颖, 魏志鹏, 李金华, 楚学影, 王晓华. 柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性[J]. 发光学报, 2012,(11): 1232-1235 DOI： 10.3788/fgxb20123311.1232.

LI Xiao-ni, FANG Fang, FANG Xuan, CHEN Xin-ying, WEI Zhi-peng, LI Jin-hua, CHU Xue-ying, WANG Xiao-hua. The Optical and Electrical Properties of ZnO Films Grown on Flexible Substrate at Low Temperature by ALD[J]. Chinese Journal of Luminescence, 2012,(11): 1232-1235 DOI： 10.3788/fgxb20123311.1232.

摘要

以二乙基锌和水分别作为金属前驱体和反应物

利用原子层沉积方法(ALD)在柔性衬底上生长ZnO薄膜

讨论了生长温度对薄膜特性的影响。用AFM、XRD和HALL等对薄膜的表面形貌、晶体结构和电学性质进行表征

并且用PL光谱表征了其光学特性。实验结果表明

随着生长温度(低温下)的升高

薄膜的晶体质量和光学特性得到改善。当生长温度为170 ℃时

薄膜呈现良好的

轴择优取向

且具有较高的电子浓度(5.62×10

-3

)和电子迁移率(28.2 cm

·V

-1

·s

-1

)。

Abstract

ZnO films were grown on flexible substrate by the atomic layer deposition (ALD) using diethyl zinc (DEZn) as a metal precursor and water as a reactant. AFM

XRD and HALL effect were used to investigate the morphology

structural and electrical properties of the films. PL spectrum was measured for optical property. With the increasing temperature

the crystal quality and optical property of the films were improved. When grown at 170℃

the films exhibited

-axis orientation

the electron concentration was 5.62×10

and the electron mobility was 28.2 cm

·V

-1

·s

-1

关键词

ZnOALD生长温度柔性衬底

Keywords

ZnOALDgrowth temperatureflexible substrate

references

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