1. 南昌大学 教育部发光材料与器件工程研究中心,江西 南昌,330047
2. 晶能光电(江西)有限公司,江西 南昌,330096
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肖友鹏, 莫春兰, 邱 冲, 等. Si衬底GaN基蓝光LED老化性能[J]. 发光学报, 2010,31(3):364-368.
XIAO You-peng, MO Chun-lan, QIU Chong, et al. The Aging Characteristics of GaN-based Blue LED on Si Substrate[J]. Chinese Journal of Luminescence, 2010,31(3):364-368.
报道了芯片尺寸为500 μm×500 μm 硅衬底GaN基蓝光LED在常温下经1 000 h加速老化后的电学和发光性能,其光功率随老化时间的变化分先升后降两个阶段;老化后的反向漏电流和正向小电压下的电流均有明显的增加;老化后器件的外量子效率(EQE)比老化前低;老化前后EQE衰减幅度在不同的注入电流下存在明显差异,衰减幅度最小处出现在发光效率最高时对应的电流密度区间。
The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied. The LED samples were stressed at room temperature with an injection current of 200 mA. Light-output power increases in the first stage and decreases with aging time. The current-voltage characteristics were also analyzed. Reverse current and forward current at low bias were increased significantly. The external quantum efficiency (EQE) of device after aging is lower than the pre-aging one. The EQE attenuation before and after aging are significantly different at different injection currents. The smallest attenuation occurs in the current density range corresponding to the highest efficiency.
硅衬底GaN蓝光LED老化光衰
Si substrateGaNblue LEDaging testluminous decay
. Johannes Baur, Frank baumann, Matthias Peter, et al. Status of high efficiency and high power thin GaN-LED development [J]. Phys. Status Solidi (c), 2009, 6 (s2):S905-S908.
. Dupuis R D, Krames M R. History, development, and applications of high-brightness visible light-emitting diodes [J]. IEEE J. Lightwave Technology, 2008, 26 (9):1154-1171.
. Luo Yi, Zhang Xianpeng, Han Yanjun, et al. Key technologies for solid state lighting [J]. Laser & Optoelectronics Progress (激光与光电子学进展), 2007, 44 (3):17-28 (in Chinese).
. Hahn B, Weimar A, Peter M, et al. High-power InGaN LEDs: present status and future prospects [J]. SPIE, 2008, 6910 :691004-1-8.
. Fang Fubo, Wang Yaohao, Song Daihui, et al. Spectroscopic analysis of white LED attenuation [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):353-357 (in Chinese).
. Li Junfei, Rao Haibo, Hou Bin, et al. Investigation on improving the extraction efficiency of power white LEDs with slurry method [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):19-24 (in English).
. Chu Minghui, Wu Qing, Wang Jian, et al. Calculation of theoretical limitation of lumen efficiency for white LED [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):77-80 (in Chinese).
. Wang Jian, Huang Xian, Jiang Dapeng, et al. Effect of temperature and current on LED luminous efficiency [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):358-362 (in Chinese).
. Ishizaki Shinya. Lifetime estimation of high power white LEDs [J]. J. Light and Visual Environment, 2007, 31 (1):11-18.
. You Da, Cheng Haiying, Jiang Fengyi, et al. Study of the reliability of Si-based GaN high-power LED . Zhenjiang:China Optics and Optoelectronics Manufactures Association, 2008.
. Cheng Haiying, You Da, Jiang Fengyi, et al. Research of Silicon substrate GaN-based green LED optical and aging performance . Zhenjiang: China Optics and Optoelectronics Manufactures Association, 2008.
. Qiu Chong, Liu Junlin, Jiang Fengyi, et al. The influence of SiN passivation layer to the GaN based blue LED on Si substrate [J]. Chin . J. Lumin. (发光学报 ), 2008, 29 (5):840-844 (in Chinese).
. Mo Chunlan, Fang Wenqing, Liu Hechu, et al. Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD [J]. J. Crystal Growth, 2005, 285 (3):312-317.
. Xiong Chuanbing, Jiang Fengyi, Wang Li, et al. Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate [J]. Science in China (series E: Technological Sciences), 2006, 49 (3):313-321.
. Narendran N, Gu Y. Life of LED-based white light sources [J]. IEEE OSA J. Disp. Technol.,2005, 1 (1):167-171.
. Jianzheng Hu, Lianqiao Yang, Moo Whan Shin, et al. The aging mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses [J]. Semicond. Sci. Technol., 2007, 22 (12):1249-1252.
. Cao X A, Sandvik P M, Leboeuf S F, et al. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses [J]. Microelectron. Reliab., 2003, 43 (1):1987-1991.
. Pavesi M, Salviati G, Armani N, et al. Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress [J]. Appl. Phys. Lett., 2004, 84 (17):3403-3405.
. Meneghini M, Trevisanello L R, Meneghesso G, et al. High-temperature degradation of GaN LEDs related to passivation [J]. IEEE Trans. Electron Devices, 2006, 53 (12):2981-2987.
. Lee S W, Oh D C, Goto H, et al. Origin of forward leakage current in GaN-based light-emitting devices [J]. Appl. Phys. Lett., 2006, 89 (13):132117-1-3.
. Otto Pursiainen, Norbert Linder, Arndt Jaeger, et al. Identification of aging mechanisms in the optical and electrical cha-racteristics of light-emitting diodes [J]. Appl. Phys. Lett., 2001, 79 (18):2895-2897.
. Liu Weihua, Wang Li, Jiang Fengyi, et al. Research on the ideality factor of GaN light-emitting diodes on Si substrate[J]. J. Functional Materials and Devices (功能材料与器件), 2006, 11 (1):45-48 (in Chinese).
. Meneghini M, Meneghesso G, Levada S, et al. High brightness GaN LEDs degradation during dc and plused stress [J]. Microelectron. Reliab., 2006, 46 (9-11):1720-1724.
. Rozhansky I V, Zakheim D A. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping [J]. Phys. Stat. Sol. A, 2007, 204 (1):227-230.
. Reynolds C L, Jr, Patel A. Tunning entity in different injection regimes of InGaN light emitting diodes [J]. J. Appl. Phys., 2008, 103 (8):086102-1-2.
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