额定压强下O2/Ar比对ZnO : Al薄膜导电性能的影响

邓雪然; 邓 宏; 韦 敏; 陈金菊

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额定压强下O₂/Ar比对ZnO : Al薄膜导电性能的影响

论文 | 更新时间：2020-08-12

- 额定压强下O₂/Ar比对ZnO : Al薄膜导电性能的影响
- Effects of O₂/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO : Al Films
- 发光学报 2010年31卷第2期页码：227-229
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室, 四川成都 610054
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.4;O484.4+2
- 纸质出版日期：2010-4-30，
  
  网络出版日期：2010-4-30，
  
  收稿日期：2009-11-10，
  
  修回日期：1900-1-2，
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邓雪然;邓宏;韦敏;陈金菊. 额定压强下O2/Ar比对ZnO : Al薄膜导电性能的影响[J]. 发光学报, 2010,31(2): 227-229

DENG Xue-ran;DENG Hong;WEI Min;CHEN Jin-ju. Effects of O2/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO : Al Films[J]. 发光学报, 2010,31(2): 227-229
邓雪然;邓宏;韦敏;陈金菊. 额定压强下O2/Ar比对ZnO : Al薄膜导电性能的影响[J]. 发光学报, 2010,31(2): 227-229 DOI：

DENG Xue-ran;DENG Hong;WEI Min;CHEN Jin-ju. Effects of O2/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO : Al Films[J]. 发光学报, 2010,31(2): 227-229 DOI：

摘要

采用射频磁控溅射法在石英玻璃基片上制备出ZnO : Al薄膜

并对薄膜在不同O

/Ar比状态下的沉积厚度、结晶性能和导电性能之间的关系进行了探讨。测试结果表明:在0.2 Pa的额定压强下

Ar流量越大

薄膜的厚度越大

XRD峰越强

薄膜的电阻率(

)值越低。在纯氩气状态下溅射时

制得的薄膜具有最大的厚度值

约为2.06 m

并具有最强的XRD峰

同时也达到最小值

阻值为2.6610

-4

cm。研究表明:结晶性能的提高对薄膜

的降低起到了关键作用

而厚度的增加也会使电阻率下降。

Abstract

Thin ZnO : Al(AZO)films were prepared on the quartz substrates by using rf magnetron sputtering method

and the effects of O

/Ar ratio on the thickness

crystallization and conductivity of the thin films were investigated. Results shown that under a certain pressure

the films gain larger thickness and higher conductvity with increasing flow rate of Ar. The sample prepared in the pure Ar ambience can gain the lowest resistivity because of the high crystallization and large thickness. The thickness and resistivity is 2.06 m and 2.6610

-4

cm respectively. As shown by the results

we found that the high crystallization is the crucial factor for decreasing resistivity and the large thickness will decrease it as well.

关键词

射频磁控溅射ZnOAl(AZO)薄膜O2/Ar比导电性能

Keywords

references

. Yu Fen, Yan Jinliang, Ma Qiuming. Influence of O2/Ar ratio on optical properties of ZAO films [J]. Chin. J. Semiconductors (半导体学报), 2007, 28 (supplement):153-156 (in Chinese).

. Ge Chunqiao. Influence of the dopant concentration on its microstructure, electrical and optical properties of Al : ZnO film [J]. Piezoelectrics & Acoustooptics (压电与声光), 2005, 27 (6):676-678 (in Chinese).

. Song Dengyuan, Wang Yongqing, Sun Rongxia, et al. Effect of Ar pressure on properties of ZnO : Al films prepared by RF magnetron sputtering [J]. Chin. J. Semiconductors (半导体学报), 2002, 23 (10):1078-1082 (in Chinese).

. Yang Bangchao, Wang Wensheng. Physics and Technology of Thin Films [M]. Chengdu: Press of University of Electronic Science and Technology of China, 1993, 60-61.

. Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor Physics [M]. (6th Edition) Beijing: Electronics Industry Press,2005, 109-118.

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