具有Au/MoO<SUB>3</SUB>空穴注入层的有机发光二极管

涂爱国; 周 翔

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具有Au/MoO₃空穴注入层的有机发光二极管

论文 | 更新时间：2020-08-12

- 具有Au/MoO₃空穴注入层的有机发光二极管
- OLEDs with Au/MoO₃ Hole Injection Layer
- 发光学报 2010年31卷第2期页码：157-161
- 作者机构：
  
  中山大学光电材料与技术国家重点实验室,广东广州,510275
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383.1;TN873.3
- 纸质出版日期：2010-4-30，
  
  网络出版日期：2010-4-30，
  
  收稿日期：2009-8-30，
  
  修回日期：1900-1-2，
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涂爱国, 周翔. 具有Au/MoO₃空穴注入层的有机发光二极管[J]. 发光学报, 2010,31(2):157-161.

TU Ai-guo, ZHOU Xiang. OLEDs with Au/MoO₃ Hole Injection Layer[J]. Chinese Journal of Luminescence, 2010,31(2):157-161.
涂爱国, 周翔. 具有Au/MoO₃空穴注入层的有机发光二极管[J]. 发光学报, 2010,31(2):157-161. DOI：

TU Ai-guo, ZHOU Xiang. OLEDs with Au/MoO₃ Hole Injection Layer[J]. Chinese Journal of Luminescence, 2010,31(2):157-161. DOI：

摘要

研究了单层MoO

(5 nm)和复合Au(4 nm)/MoO

(5 nm)HILs对OLEDs器件性能的影响

器件结构为ITO／HIL／NPB(40 nm)／Alq

(60 nm)／LiF (1 nm)/Al (100 nm)。与单层MoO

HIL的器件相比

具有复合Au/MoO

HIL的器件具有较大的电流和亮度。这是由于Au的功函数介于ITO和MoO

之间

导致Au的引入提高了空穴的注入效率。

Abstract

OLEDs have been recognized as charge-injection electroluminescent devices. Using suitable hole injection layer (HIL) can reduce the barrier of hole injection from the anode to the hole transport layer

improve the hole injection

decrease the driving voltage of the OLEDs and enhance the efficiency and stability of the OLEDs. In this article

the OLEDs with structure of ITO／HIL／NPB(40 nm)／Alq

(60 nm)／LiF (1 nm)/Al (100 nm)

where the HIL is single MoO

(5 nm) layer or composite Au(4 nm)/MoO

(5 nm) layers

were reported. It was found that the OLEDs with the composite Au/MoO

HIL shows higher current density and luminance than those of the OLEDs with single MoO

HIL at the same driving voltage

which indicates that hole injection is improved by further introducing the 4 nm Au between ITO and MoO

关键词

有机发光二极管空穴注入层Au/MoO3

Keywords

OLEDshole injection layerAu/MoO3

references

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具有Au/MoO3空穴注入层的有机发光二极管

OLEDs with Au/MoO3 Hole Injection Layer

DOI：

摘要

Abstract

关键词

Keywords

references

具有Au/MoO₃空穴注入层的有机发光二极管

OLEDs with Au/MoO₃ Hole Injection Layer