膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响

王 新; 向 嵘; 李 野; 王国政; 付申成; 端木庆铎; 姜德龙; 吴 奎

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膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响

论文 | 更新时间：2020-08-12

- 膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响
- Effects of Thickness on the Properties of ITO Thin Films Grown on Sapphire Substrate
- 发光学报 2009年30卷第5期页码：712-716
- 作者机构：
  
  长春理工大学理学院,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.4+1;O484.4+2
- 纸质出版日期：2009-10-30，
  
  网络出版日期：2009-10-30，
  
  收稿日期：2009-1-25，
  
  修回日期：1900-1-2，
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王新, 向嵘, 李野, 等. 膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响[J]. 发光学报, 2009,30(5):712-716.

WANG Xin, XIANG Rong, LI Ye, et al. Effects of Thickness on the Properties of ITO Thin Films Grown on Sapphire Substrate[J]. Chinese Journal of Luminescence, 2009,30(5):712-716.
王新, 向嵘, 李野, 等. 膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响[J]. 发光学报, 2009,30(5):712-716. DOI：

WANG Xin, XIANG Rong, LI Ye, et al. Effects of Thickness on the Properties of ITO Thin Films Grown on Sapphire Substrate[J]. Chinese Journal of Luminescence, 2009,30(5):712-716. DOI：

摘要

采用磁控溅射的方法在蓝宝石衬底上制备了氧化铟锡(ITO)透明氧化物薄膜;研究了不同厚度薄膜的结构、光学和电学特性。经X射线衍射(XRD)测量

发现在蓝宝石衬底上生长的ITO薄膜呈现了较高的(222)择优取向;随着膜层厚度的增加

该衍射峰对应的2

衍射角逐渐向大角度方向移动

同时该衍射峰的半峰全宽逐渐减小

平均晶粒尺寸增大。经光学透射光谱测量

发现随着膜层厚度的增加

光学透过率逐渐减小。膜层厚度为0.2 μm时

可见光透过率超过80%

当膜层厚度为0.8 μm时

可见光透过率下降到60%。电学测量结果表明

随着膜层厚度的增加

薄膜电阻率逐渐减小。膜层厚度为0.2 μm时

电阻率为9×10

-4

Ω·cm

膜层厚度为0.8 μm时

电阻率为5.5×10

-4

Ω·cm。

Abstract

Indium tin oxide (ITO

or tin-doped indium oxide) is a mixture of indium oxide(In

) and tin oxide (SnO

)

typically 90%In

10%SnO

in mass fraction. It is transparent and colorless for ITO layers. Indium tin oxides main feature is the combination of electrical conductivity and optical transparency. ITO is mainly used to make transparent conductive coatings for flat panel displays

plasma displays

and solar cells. In this paper

ITO thin films were grown on

-face sapphire substrate by rf magnetron sputtering from an oxide ceramic target of 90% In

and 10%SnO

. The sapphire substrate were cleaned strickly and blown dry in N

gas before they were introduced into the chamber. High purity Ar and O

were introduced through independent mass flow controllers after the vacuum chamber was evacuated below 11×10

-5

Pa. The oxygen content in the sputter gas was determined by the oxygen-to-argon partial pressure ratio. The process total pressure was kept at 0.5 Pa and the sputtering time was varied to obtain thin films with thickness ranging from 0.2 to 0.8 μm. The structural

optical and electrical properties of the film were specially studied. According to the XRD diffraction measurement

it was found that ITO thin films grown on sapphire substrate show highly (222)-preferred orientation. With the increase of the films thickness

the 2

angle of (222) diffraction peak moves toward to larger direction and the full width at the half maximum (FWHM) of the peak decreases. When the thickness of the ITO thin film is 0.2 μm

the FWHM is about 0.46°. When the thickness increased from 0.4 μm to 0.8 μm

the FWHM decreased from 0.45° to 0.43°. The thickness of the thin film also effected on the average grain size

the average grain size is 17.8

18.3

18.7 and 19.3 nm for ITO thin film with a thickness of 0.2

0.4

0.6 and 0.8 μm

respectively. According to the optical measurement results

the optical transmittance of the film decrease with the increase of the films thickness. The transmittance is about 80% and the 60% for the thickness of 0.2 μm and 0.8 μm. The electrical measurement on the films showed that the resistivity decreases with the increase of the films thickness. The resistivity is 9×10

-4

Ω·cm for ITO film with the thickness of 0.2 μm. When the thickness is increased to 0.8 μm

the resistivity is decreased to 5.5×10

- 4

Ω·cm. Thus

in factual applications

one must choose an ideal thickness of the ITO thin films in order to achieve a satisfactorily structural

optical and electrical property.

关键词

氧化铟锡磁控溅射X射线衍射光透过率电阻

Keywords

ITOmagnetron sputteringXRDtransmittanceresisitivity

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