外电场下极性量子阱中杂质态结合能

吴云峰; 梁希侠; Bajaj K K

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外电场下极性量子阱中杂质态结合能

论文 | 更新时间：2020-08-12

- 外电场下极性量子阱中杂质态结合能
- Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field
- 发光学报 2009年30卷第3期页码：285-292
- 作者机构：
  
  1. 大连民族学院理学院,辽宁大连,116600
  2. 内蒙古大学物理系,内蒙古呼和浩特,010021
  3. 爱默瑞大学物理系, 22 亚特兰大,美国,CA303
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;O471.3
- 纸质出版日期：2009-6-30，
  
  网络出版日期：2009-6-30，
  
  收稿日期：2008-9-10，
  
  修回日期：1900-1-2，
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吴云峰, 梁希侠, Bajaj K K. 外电场下极性量子阱中杂质态结合能[J]. 发光学报, 2009,30(3):285-292.

WU Yun-feng, LIANG Xi-xia, Bajaj K K. Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field[J]. Chinese Journal of Luminescence, 2009,30(3):285-292.
吴云峰, 梁希侠, Bajaj K K. 外电场下极性量子阱中杂质态结合能[J]. 发光学报, 2009,30(3):285-292. DOI：

WU Yun-feng, LIANG Xi-xia, Bajaj K K. Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field[J]. Chinese Journal of Luminescence, 2009,30(3):285-292. DOI：

摘要

我们用变分方法研究了外电场下量子阱中的杂质态结合能

计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al

0.3

0.7

As量子阱为例

讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。

Abstract

The binding energies of donor impurity states in quantum wells in the presence of an electric field were investigated by a variational method. The impurity-center as well as the bound electron couplings with both the longitudinal optical (LO) and interface optical (IO) phonons were taken into account in the calculation. The binding energies were obtained as the functions of impurity position

well width and electric field strength. The results for GaAs/Al

0.3

0.7

As quantum wells as an example were given and discussed. It was found that the correction due to electron-phonon interaction to the impurity state binding energies and the Stark shifts is quite significant.

关键词

施主杂质态电子-声子相互作用量子阱斯塔克效应

Keywords

donor impurity stateelectron-phonon interactionquantum wellStark effect

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