1. 首都师范大学 物理系, 北京 100048
2. 中国科学院物理研究所 北京凝聚态物理国家实验室, 北京 100190
3. 吉林大学 物理学院, 吉林 长春 130031
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杨成良, 叶慧琪, 王文新, 等. 界面生长中断对GaAs (111)衬底上 AlGaAs/GaAs量子阱电子自旋寿命的影响[J]. 发光学报, 2009,30(2):214-218.
InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese Journal of Luminescence, 2009,30(2):214-218.
用固源分子束外延技术(SSMBE)在GaAs(111)衬底上,采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs),通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响,发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势,此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致,适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。
paper
光致发光分子束外延时间分辨克尔旋转谱多量子阱
. Esaki L, Tsu R. Superlattice and negative differential conductivity in semiconductors [J]. IBM J. Res. Dev., 1970, 14 (1):61-65.
. Likharev K K. Single-electron devices and their applications [J]. IEEE, 1999, 87 (4):606-632.
. Averkiev N S, Golub L E. Giant spin relaxation anisotropy in zinc-blende heterostructures [J]. Phys. Rev. B, 1999, 60 (23):15582-15584.
. Kisele V A A, Kim K W. Suppression of Dyakonov-Perel spin relaxation in 2D channels of finite width [J]. Phys. Status Solidi B, 2000, 221 (1):491-494.
. Dresselhaus G. Spin-orbit coupling effects in zinc blende structures [J]. Phys. Rev., 1955, 100 (1):580-586.
. Bychkov Y A, Rashba E I. Oscillatory effects and the magnetic-susceptibility of carriers in inversion-layers [J]. J. Phys. C, 1984, 17 (33):6039-6045.
. Henini M, Karimov O Z, John G H, et al. Gated spin relaxation in (110)-oriented quantum wells [J]. Phys. E, 2004, 23 (3-4):309-314.
. Cartoixà X, Ting D Z Y, Chang Y C. Suppression of the Dyakonov-Perel spin-relaxation mechanism for all spin components in
. zinc blende quantum wells [J]. Phys. Rev. B, 2005, 71 (4):045313-1-5.
. Weber C P, Orenstein J, Andrei Bernevig B, et al. Nondiffusive spin dynamics in a two-dimensional electron gas [J]. Phys. Rev Lett., 2007, 98 (7):076604-1-4.
. Albert Chin, Lee K. High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates [J]. Appl. Phys. Lett., 1996, 68 (24):3437-3439.
. Liu B, Zhao H, Wang J, et al. Electron density dependence of in-plane spin relaxation anisotropy in GaAs/AlGaAs two-dimensional electron gas [J]. Appl. Phys. Lett., 2007, 90 (11):112111-1-3.
. Morkoc H, Drummond T J, Fischer R, et al. Moderate mobility enhancement in single period AlxGa1-xAs/GaAs heterojunctions with GaAs on top [J]. J. Appl. Phys., 1982, 53 (4):3321-3323.
. Shang X Z, Wang W C, Wu S D, et al. Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas [J]. Semicond. Sci. Technol., 2004, 19 (3):519-522.
. Leosson K, Jensen J R, Langbein W, et al. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells [J]. Phys. Rev. B, 2000, 61 (15):10322-10329.
. Kohrbruck R, Munnix S, Bimberg D, et al. Inequivalence of normal and inverted interfaces of molecular beam epitaxy grown AlGaAs GaAs quantum wells [J]. J. Vac. Sci. Technol. B, 1990, 8 (4):798-804.
. Ohno Y, Terauchi R, Adachi T, et al. Electron spin relaxation beyond Dyakonov-Perel interaction in GaAs/AlGaAs quantum wells [J]. Phys. E, 2000, 6 (1-4):817-820.
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