Liu Xueyan. A MEASURABLE METHOD OF ALUMINIUM COMPOSITE OF Ga1-xAlxAs EPITAXIAL MATERIAL WITHIN ACTIVE REGION[J]. Chinese Journal of Luminescence, 1998,19(4): 361-363
Liu Xueyan. A MEASURABLE METHOD OF ALUMINIUM COMPOSITE OF Ga1-xAlxAs EPITAXIAL MATERIAL WITHIN ACTIVE REGION[J]. Chinese Journal of Luminescence, 1998,19(4): 361-363DOI:
Ga1-xAlxAs外延片有源区Al组份的测定方法
摘要
由于GaAs与AlAs晶格常数相近
GaAs晶格常数为0.56535nm
AlAs的晶格常数为0.56605nm
当固熔体中Al组份x值从0变到1时
晶格常数变化约为0.15%.因此
在GaAs衬底上生长Ga
1-x
Al
x
As时
在界面处的失配位错少
这对提高发光效率非常有利。
Abstract
In this paper emitting specta of Ga
1-x
Al
x
As material in active region is measured using eletroluminescence. The x values region is obtained from formulation. The method has accurate
quick and simple excellence. It is good measure method for middle measurement of product.