高对称性晶体结构中实现Bi<sup>3+</sup>窄带蓝光发射

魏忆; 李国岗

doi:10.37188/CJL.20210141

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高对称性晶体结构中实现Bi³⁺窄带蓝光发射

材料合成及性能 | 更新时间：2021-09-13

- 高对称性晶体结构中实现Bi³⁺窄带蓝光发射
  增强出版
- Narrow-band Blue Emission of Bi³⁺ Based on High Crystal Structure Symmetry
- 发光学报 2021年42卷第9期页码：1365-1375
- 作者机构：
  
  中国地质大学(武汉)材料与化学学院　教育部纳米矿物材料及应用工程研究中心，湖北　武汉　 430074
- 作者简介：
  
  [ "魏忆(1995-)，女，四川宜宾人，博士研究生，2017年于中国地质大学(武汉)获得学士学位，主要从事稀土及铋掺杂型无机固体发光材料的晶体结构及发光性能的研究。 E-mail: yiwei@cug.edu.cn" ]
  [ "李国岗(1983-)，男，河北衡水人，博士，教授，博士研究生导师，2012年于中国科学院长春应用化学研究所获得博士学位，主要从事掺杂型无机固体发光材料局域结构设计与发光性能调控、外界环境诱导低维钙钛矿智能响应发光材料的应用基础研究。 E-mail:ggli@cug.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(52072349);中国地质大学（武汉）中央高校基本科研业务费专项资金(1910491T02)
- DOI：10.37188/CJL.20210141
  中图分类号： O482.31
- 纸质出版日期：2021-09-01，
  
  收稿日期：2021-04-21，
  
  修回日期：2021-05-08，
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魏忆, 李国岗. 高对称性晶体结构中实现Bi³⁺窄带蓝光发射[J]. 发光学报, 2021,42(9):1365-1375.

Yi WEI, Guo-gang LI. Narrow-band Blue Emission of Bi³⁺ Based on High Crystal Structure Symmetry[J]. Chinese Journal of Luminescence, 2021,42(9):1365-1375.
魏忆, 李国岗. 高对称性晶体结构中实现Bi³⁺窄带蓝光发射[J]. 发光学报, 2021,42(9):1365-1375. DOI： 10.37188/CJL.20210141.

Yi WEI, Guo-gang LI. Narrow-band Blue Emission of Bi³⁺ Based on High Crystal Structure Symmetry[J]. Chinese Journal of Luminescence, 2021,42(9):1365-1375. DOI： 10.37188/CJL.20210141.

摘要

采用高温固相法合成了系列K

CaGe

∶

(0.003≤

≤0.10)荧光粉材料。通过精细Rietveld结构精修、光致激发和发射光谱、X射线光电子衍射及热稳定性等手段对晶体结构和发光性能进行了研究。实验结果表明，在紫外光激发下，Bi

展现了半高宽低至43 nm的窄带蓝光发射。这是由于K

CaGe

基质拥有高对称性的晶体结构。与此同时，制备的K

CaGe

∶

(0.003≤

≤0.10)荧光粉材料展现了卓越的发光热稳定性，在423 K时，发光强度可以保持在室温状态下的83%。上述研究证明制备的K

CaGe

∶

(0.003≤

≤0.10)荧光粉材料在白光发光二极管(LED)或背光显示中有潜在的应用前景。在高对称性晶体结构中掺杂Bi

实现窄带发光的研究思路可以为未来窄带荧光粉的研发提供理论研究基础和科学依据。

Abstract

A series of new K

CaGe

∶

(0.003≤

≤0.10) phosphors are prepared

via

traditional high-temperature solid solution route. The detailed crystal structure and photoluminescence properties of K

CaGe

∶

(0.003≤

≤0.10) materials are studied through precise Rietveld structure refinement

photoluminescence excitation and emission spectra

XPS and thermal stability measurements. According to experimental data

displays narrow blue emission with spectral width at around 43 nm under n-UV light excitation. The main reason is that K

CaGe

shows highly-symmetric crystal structure. Meanwhile

the as-prepared K

CaGe

∶

(0.003≤

≤0.10) phosphors show excellent thermal stability

of which photoluminescence intensity at 423 K remains 83% than that at 298 K. The above results confirm that the as-prepared K

CaGe

∶

(0.003≤

≤0.10) phosphors show potential application in white LED lighting and backlight display areas. This work proposes that Bi

can achieve narrow-band emission when doping into highly-symmetric crystal structure. This approach can provide theoretical basis and guidance to exploit Bi

activated narrow-band emitting phosphor materials.

关键词

Bi3+掺杂高对称晶体结构窄带发光蓝光发射

Keywords

Bi3+ dopinghighly symmetric crystal structurenarrow emissionblue light

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关联资源

三价铋离子掺杂发光材料研究进展

高对称性晶体结构中实现Bi3+窄带蓝光发射

Narrow-band Blue Emission of Bi3+ Based on High Crystal Structure Symmetry

DOI：10.37188/CJL.20210141

摘要

Abstract

关键词

Keywords

references

高对称性晶体结构中实现Bi³⁺窄带蓝光发射

Narrow-band Blue Emission of Bi³⁺ Based on High Crystal Structure Symmetry