The performance of photodetectors is determined by various parameters， including light absorption efficiency， sensitivity， and accuracy， all of which are influenced by multiple photoelectric conversion effects such as the photovoltaic， photoconductive， pyroelectric， photothermal， and photogating effects. The photogating effect refers to the phenomenon in which some of the photogenerated charge carriers in the photosensitive material are trapped and enter trap states upon light exposure， subsequently affecting the charge carrier transport properties within the conductive channel of the photodetector. This paper reviews the photogating effect and its role in enhancing photodetector performance. It begins with an introduction to the basic principles of the photogating effect， followed by a discussion of its impact on photodetector performance， including gain， bandwidth， responsivity， response time， and transfer characteristics. The photogating effect primarily enhances the sensitivity， dynamic range， and signal-to-noise ratio of photodetectors to weak light signals by modulating the output electrical signal in response to incident light. In particular， this paper emphasizes the application of the photogating effect in low-dimensional materials-based photodetectors， such as nanowires， graphene， and other two-dimensional materials. Finally， the potential applications of the photogating effect in perovskite photodetectors are explored， and future research directions are proposed.

photogating effect;gain;responsivity;low-dimensional materials;perovskite