InAlGaAs/AlGaAs multiple quantum wells （MQWs） have attracted increasing attention in the near-infrared and visible light fields due to their wide spectral range， and have become an emerging research hotspot. This study uses metal organic chemical vapor deposition （MOCVD） growth technology to prepare InAlGaAs/AlGaAs multi quantum well materials. Based on the main factors and theoretical calculation methods that need to be considered when selecting the insertion layer （ISL） material， the influence of the insertion layer structure on the luminescence properties of quantum wells is explored. We designed and grew InAlGaAs quantum wells without an insertion layer， as well as InAlGaAs quantum wells with AlGaAs insertion layers of varying thicknesses and Al compositions. The experimental results show that the introduction of the insertion layer significantly improves the luminescence intensity of the quantum well. Although there are localized states in the sample itself， the presence of the insertion layer does not introduce more localized states， and the presence of the insertion layer does not change the carrier recombination mechanism in quantum wells. The research results provide important theoretical analysis and experimental data for the structural optimization and insertion layer technology of InAlGaAs quantum wells， indicating that the optical performance of InAlGaAs quantum wells can be significantly improved by designing the insertion layer reasonably.

InAlGaAs multi quantum well;insertion layer;metal organic chemical vapor deposition（MOCVD）