Metal oxide thin film transistors （MOTFTs） have great potential for application in large-sized organic light-emitting display driver backplanes due to their high carrier mobility and good electrical stability. In addition， the fabrication processes of MOTFTs are compatible with amorphous silicon thin film transistors’， resulting in their lower manufacturing costs and strong market advantages. However， the trade-off between mobility and stability which are the key indicators for measuring MOTFTs limits their high-end applications. Therefore， developing MOTFTs that combine high mobility with high stability has become a research hotspot and industry competition focus. Numerous studies indicate that rare earth （RE） doped oxide semiconductor materials is promising for achieving this goal. This paper focuses on reviewing the design of RE doped oxide materials that achieve both high mobility and high stability， as well as the characteristic indicators that MOTFTs have reached， and discusses the changes and development potential of RE doped MOTFTs （RE-MOTFTs）.

metal oxide thin film transistors;rare earth;mobility;stability