lanthanide ions have abundant luminescent energy levels， with their luminescence intensity and wavelength affected by the lattice symmetry. The regulation of luminescence properties via controllable lattice fields can be realized by altering electric fields and stress. Ferroelectric material has non-volatile spontaneous polarization， and its direction can be reversed or reoriented by electric fields. Doping lanthanide ions as luminescence centers into ferroelectric materials and utilizing the ferroelectric polarization field for dynamic regulation of lanthanide ions’ luminescence wavelength and intensity can significantly improve the performance of semiconductor optoelectronic devices. AlScN， with its dynamically tunable high remanent polarization， large bandgap， and high compatibility with CMOS processes， offers new opportunities for constructing novel luminescent devices with multifunctional ferroelectric regulation. This paper investigated the effects of Er³⁺ doping concentrations on the luminescence and ferroelectric properties of AlScN films. The Er³⁺ doping concentration rises， and more luminescence centers are incorporated， effectively enhancing the luminescence potential. Notably， a marked increase in luminescence of Er³⁺-doped AlScN films was achieved at doping concentrations of 3.6% to 9.4%. However， when the doping concentration exceeded 10%， a quenching effect led to the decrease of luminescence， highlighting the importance of precisely controlling the doping limit for optimal performance. Although the increase in Er³⁺ doping concentration slightly degraded the performance of AlScN， the remanent polarization remained above 80 μC/cm² at a concentration of 9.4%， demonstrating the coexistence of luminescence and robust ferroelectric performance in Er³⁺-doped AlScN films. This research fills the gap regarding lanthanide ions-doped AlScN films， laying a solid foundation for the development of highly integrated， multifunctional luminescent devices and potentially catalyzing innovation in the optoelectronic domain.

AlScN;Er³⁺;photoluminescence;robust ferroelectric performance