High-performance semiconductor X-ray detectors prefer outstanding characteristics including low detection of limit， low dark current， high sensitivity， fast response time， high radiation hardness and so on. Wide-bandgap semiconductors such as silicon carbide （SiC）， gallium nitride （GaN）， diamond， gallium oxide （Ga₂O₃）， and zinc oxide （ZnO） exhibit exceptional properties， including a wide bandgap， high electron mobility， high breakdown field strength， high saturated carrier drift velocity， and large displacement energy. These characteristics enable them to demonstrate superior performance in X-ray detection， meeting the requirements for high-performance semiconductor X-ray detectors and making them highly promising candidates for such applications.As a result， they have emerged as promising candidates for advanced X-ray detectors.In this paper， the electrical properties， preparation technology and detection performance of SiC， GaN， diamond， Ga₂O₃， ZnO X-ray detectors are introduced， and the latest research is discussed. Meanwhile， future research directions and potential applications of wide-bandgap semiconductor X-ray detectors in medical imaging， industrial detection and space exploration conduct in-deep thinking.

wide-bandgap;semiconductor;X-ray detector;gallium nitride;silicon carbide;diamond