SUN WEN-WEN, FANG FANG, WANG XIAO-LAN, et al. Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode. [J]. Chinese journal of luminescence, 2020, 41(4): 461-467.
DOI:
SUN WEN-WEN, FANG FANG, WANG XIAO-LAN, et al. Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode. [J]. Chinese journal of luminescence, 2020, 41(4): 461-467. DOI: 10.3788/fgxb20204104.0461.
Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode
we studied the effect of growth temperature on InGaN/GaN superlattice preparation layer of GaN based yellow LED on Si substrate including photoelectric and aging properties. It was found that the external quantum efficiency of the sample with higher growth temperature of the preparation layer was higher than that of the samples with the lower growth temperature. After 1 000 h of aging at 500 mA
the light decay of the samples with higher growth temperature of the preparation layer is relatively larger. The electroluminescent spectra of 100 K before and after aging showed that the hole injection pathway of high-temperature-grown sample changed after aging
and the non-radiative composite center of high-temperature sample increased more after aging. Fluorescence microscope showed that a large number of dark spots appeared before aging
the color of high-temperature sample was darker
and the color of low temperature sample was lighter and red. The number of dark spots of high-temperature sample increased after aging
but the quantity of low temperature sample did change small
which may also be one of the reasons for the higher light decay of samples with high superlattice temperature.
关键词
硅衬底黄光LED可靠性
Keywords
Si substrateyellow light-emitting diodereliability
references
LIU X H,LIU J L,MAO Q H. Effects of p-AlGaN EBL thickness on the performance of InGaN green LEDs with large V-pits [J]. Semicond. Sci. Technol., 2016,31(2):025012.
刘军林,莫春兰,张建立,等. 五基色LED照明光源技术进展 [J]. 照明工程学报, 2017,28(1):1-4. LIU J L,MO C L,ZHANG J L,et al.. Progress of five primary colours LED lighting source technology [J]. China Illuminat. Eng. J., 2017,28(1):1-4. (in Chinese)
NARUKAWA Y,ICHIKAWA M,SANGA D,et al.. White light emitting diodes with super-high luminous efficacy [J]. J. Phys. D:Appl. Phys., 2010,43(35):354002-1-6.
LV Q J,LIU J L,MO C L,et al.. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure:role of enhanced interwell carrier transport [J]. ACS Photon., 2018,6(1):130-138.
VAITKEVIIUS A,MICKEVIIUS J,DOBROVOLSKAS D,et al.. Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content [J]. J. Appl. Phys., 2014,115(21):213512.
ZHANG J L,XIONG C B,LIU J L,et al.. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate [J]. Appl. Phys. A, 2014,114(4):1049-1053.
SIZOV V S,TSATSULNIKOV A F,SAKHAROV A V,et al.. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes [J]. Semiconductors, 2010,44(7):924-930.
TSAI P C,SU Y K,CHEN W R,et al.. Enhanced luminescence efficiency of InGaN/GaN multiple quantum wells by a strain relief layer and proper Si doping [J]. Jpn. J. Appl. Phys., 2010,49(4):04DG07.
MU Q,XU M S,WANG X S,et al.. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells [J]. Phys. E, 2016,76:1-5.
齐维靖. 准备层及量子阱区生长条件对Si衬底GaN基LED性能影响的研究 [D]. 南昌:南昌大学, 2018. QI W J. Study on The Effects of The Growth Conditions of Preparation Layer and Quantum Well on The Properties of GaN-based LED Grown on Si Substrates [D]. Nanchang:Nanchang University, 2018. (in Chinese)
吴庆丰. 含V形坑的Si衬底GaN基单量子阱绿光LED有源区研究 [D]. 南昌:南昌大学, 2019. WU Q F. Study on The Active Region of V Pit-containing GaN-based Single Quantum Well Green LED Grown on Si Substrates [D]. Nanchang:Nanchang University, 2019. (in Chinese)
WANG G X,TAO X X,LIU J L,et al.. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures [J]. Semicond. Sci. Technol., 2015,30(1):015018.
CHO H K,LEE J Y,KIM C S,et al.. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition [J]. J. Appl. Phys., 2002,91(3):1166-1170.
LE L C,ZHAO D G,JIANG D S,et al.. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness [J]. J. Appl. Phys., 2013,114(14):143706-1-5.
HAN D P,ZHENG D G,OH C H,et al.. Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements [J]. Appl. Phys. Lett., 2014,104(15):151108.
MENEGHINI M,TAZZOLI A,MURA G,et al.. A review on the physical mechanisms that limit the reliability of GaN-based LEDs [J]. IEEE Trans. Electron Devices, 2010,57(1):108-118.
RYU H Y,KIM H S,SHIM J I. Rate equation analysis of efficiency droop in InGaN light-emitting diodes [J]. Appl. Phys. Lett., 2009,95(8):081114-1-3.
陶喜霞. 高光效硅衬底GaN基黄光发光二极管发光性能研究 [D]. 南昌:南昌大学, 2018. TAO X X. Study on Luminescence Properties of High-efficiency GaN-based Yellow Light Emitting Diodes Grown on Si Substrate [D]. Nanchang:Nanchang University, 2018. (in Chinese)
CHO Y H,LEE S K,KWACK H S,et al.. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters [J]. Appl. Phys. Lett., 2003,83(13):2578-2580.