SUN Wen-wen, FANG Fang, WANG Xiao-lan, et al. Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode. [J]. Chinese Journal of Luminescence 41(4):461-467(2020)
SUN Wen-wen, FANG Fang, WANG Xiao-lan, et al. Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode. [J]. Chinese Journal of Luminescence 41(4):461-467(2020) DOI： 10.3788/fgxb20204104.0461.
Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode
In this paper, we studied the effect of growth temperature on InGaN/GaN superlattice preparation layer of GaN based yellow LED on Si substrate including photoelectric and aging properties. It was found that the external quantum efficiency of the sample with higher growth temperature of the preparation layer was higher than that of the samples with the lower growth temperature. After 1 000 h of aging at 500 mA, the light decay of the samples with higher growth temperature of the preparation layer is relatively larger. The electroluminescent spectra of 100 K before and after aging showed that the hole injection pathway of high-temperature-grown sample changed after aging, and the non-radiative composite center of high-temperature sample increased more after aging. Fluorescence microscope showed that a large number of dark spots appeared before aging, the color of high-temperature sample was darker, and the color of low temperature sample was lighter and red. The number of dark spots of high-temperature sample increased after aging, but the quantity of low temperature sample did change small, which may also be one of the reasons for the higher light decay of samples with high superlattice temperature.
Si substrateyellow light-emitting diodereliability
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