LU Hong-bo, LI Ge, LI Xin-yi etc. Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells[J]. Chinese Journal of Luminescence, 2020,41(4): 351-356 DOI： 10.3788/fgxb20204104.0351.
Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells
The continuous improvement in efficiency of Ⅲ-Ⅴ solar cells requires further detailed subdivision of the bandgap of energy conversion materials, to realize more efficient utilizing of the full solar spectrum. In the short wave infrared spectrum, InGaAsP quaternary hybrid material is a potential photoelectric conversion material due to its tunableness in bandgap and lattice constant. In this paper, the growth of InGaAsP materials and the fabrication of sub-cell devices were studied. The characteristics of lattice-mismatched InGaAsP materials were tested and analyzed by HRXRD, TRPL and other characterization methods at room temperature. Under negative mismatch growth condition, the quality of InGaAsP material increases gradually with the negative mismatch degree. Applied to sub-cell fabrication, a certain degree of negative mismatch is conducive to the improvement of device performance. The open-circuit voltage of the fabricated single-junction solar cell increases from 633 mV at lattice-matching to 684 mV at negative lattice-mismatch, thus providing a novel method to improve the efficiency of Ⅲ-Ⅴ multijunction solar cell.
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