Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO<sub>2</sub> Nanosphere Thin Films on GaAs Surface

WANG Zhi-dong; LIU Yun; PENG Xin-cun; ZOU Ji-jun; ZHU Zhi-fu; DENG Wen-juan

doi:10.3788/fgxb20204103.0253

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Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO₂ Nanosphere Thin Films on GaAs Surface

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO₂ Nanosphere Thin Films on GaAs Surface
- Chinese Journal of Luminescence Vol. 41, Issue 3, Pages: 253-258(2020)
- 作者机构：
  
  1. 东华理工大学江西省新能源工艺及装备工程技术中心,江西南昌,330013
  2. 东华理工大学教育部核技术应用工程研究中心, 江西南昌 330013
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11875012,61204071);Openi
- DOI：10.3788/fgxb20204103.0253
  CLC：
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WANG Zhi-dong, LIU Yun, PENG Xin-cun, et al. Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO₂ Nanosphere Thin Films on GaAs Surface. [J]. Chinese Journal of Luminescence 41(3):253-258(2020)
DOI：

WANG Zhi-dong, LIU Yun, PENG Xin-cun, et al. Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO₂ Nanosphere Thin Films on GaAs Surface. [J]. Chinese Journal of Luminescence 41(3):253-258(2020) DOI： 10.3788/fgxb20204103.0253.

摘要

二维纳米阵列结构因其重要的光学性能被广泛应用于各类光电子器件。本文对自组装单层SiO,2,纳米球掩模刻蚀法制备GaAs纳米柱二维阵列结构的关键工艺技术进行了研究。采用旋涂法在GaAs表面制备自组装单层SiO,2,纳米球，重点研究了GaAs表面氧等离子体亲水处理工艺对纳米球排列特性的影响，获得最佳工艺条件为功率配比100 W+80 W、腔室压力4 Pa、氧气流量20 mL/min、处理时间1 200 s，并最终得到排列紧密的大面积单层纳米球薄膜。以单层纳米球为掩模，采用感应耦合等离子体刻蚀技术在GaAs表面制备了纳米柱阵列并测试了其表面光反射谱。测试结果表明，GaAs纳米柱阵列在特定波段的反射率降低至5%，远低于表面无纳米结构的薄膜材料表面高达40%的光反射。分析表明纳米柱可以激发米氏散射共振效应，从而有效降低反射率并提升光吸收。

Abstract

Two-dimensional nano-array structures have been widely used in many optoelectronic devices due to their excellent optical performances. In this work, nano-pillar arrays were fabricated on GaAs substrate by self-assembled monolayer SiO,2, nanospheres etching. Monolayer SiO,2, nanospheres were self-assembled on GaAs substrate by rotary coating. The order of the nanosphere distribution was improved by improving the oxygen plasma hydrophilic treatment process of GaAs surface, and a large area of tightly arranged monolayer nanosphere was obtained under the power ratio of 100 W+80 W, the chamber pressure of 4 Pa, the oxygen flow rate of 20 mL/min and the etching time of 1 200 s. Taken this monolayer nanosphere as the etching mask, highly ordered GaAs nano-pillar array was then fabricated by inductively coupled plasma etching. The reflectivity of the GaAs nano-pillar array structure was found to be about 5% in a specific band by spectral analysis, which shows that light absorption can be enhanced effectively and can further match the requirements of actual optoelectronic devices.

关键词

SiO2纳米球氧等离子体ICP刻蚀

Keywords

SiO2 nanospheresoxygen plasmaICP etch

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Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO2 Nanosphere Thin Films on GaAs Surface

DOI：10.3788/fgxb20204103.0253

摘要

Abstract

关键词

Keywords

references

Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO₂ Nanosphere Thin Films on GaAs Surface