To improve the performance of 9xx nm high power semiconductor lasers, the doping profile of n-cladding layer and p-cladding layer is adjusted to reduce the internal loss. A high energy band gap GaAsP was introduced between the active region and the waveguide layer to reduce the leakage of carriers in the active region. A broad area laser with internal loss of 1.25 cm is designed and fabricated. The device with maximum output power of 26.5 W is obtained. The maximum electrical-optical power conversion efficiency is 72.4%, which is obtained when the output power is 10.5 W. The slope efficiency is 1.16 W/A.
laser diodeinternal lossfree carrier absorption
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Ultrafast Optical Nonlinearities in GaAs at Telecommunication Wavelengths
Thermal-resistor Analysis of The Laser Chips with Different Size in C-mount Package
Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha 410083, China
Advanced Photonics Center, Southeast University, Nanjing 210096, China
National Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology