Optimal Design of Thin Film Transistor in Luminescent Film Deposition Technology

ZHU Xiao-ke; LIANG Yi-qian; LIU Lin-lin; LIU Yang-hui; HOU Yi-man

doi:10.3788/fgxb20204101.0086

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Optimal Design of Thin Film Transistor in Luminescent Film Deposition Technology

Device Fabrication and Physics | 更新时间：2020-08-12

- Optimal Design of Thin Film Transistor in Luminescent Film Deposition Technology
- Chinese Journal of Luminescence Vol. 41, Issue 1, Pages: 86-94(2020)
- 作者机构：
  
  1. 华南理工大学材料科学与工程学院,广东广州,510640
  2. 华南理工大学发光材料与器件国家重点实验室, 广东广州 510640
- 作者简介：
- 基金信息：
  
  Supported by National Innovation and Entrepreneurship Training Program for College S
- DOI：10.3788/fgxb20204101.0086
  CLC： TP394.1;TH691.9
- Published：5 January 2020，
  
  Published Online：18 October 2019，
  
  Received：28 August 2019，
  
  Revised：15 October 2019，
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朱筱珂, 梁依倩, 刘琳琳等. 发光薄膜沉积技术中薄膜晶体管的优化设计[J]. 发光学报, 2020,41(1): 86-94

ZHU Xiao-ke, LIANG Yi-qian, LIU Lin-lin etc. Optimal Design of Thin Film Transistor in Luminescent Film Deposition Technology[J]. Chinese Journal of Luminescence, 2020,41(1): 86-94
朱筱珂, 梁依倩, 刘琳琳等. 发光薄膜沉积技术中薄膜晶体管的优化设计[J]. 发光学报, 2020,41(1): 86-94 DOI： 10.3788/fgxb20204101.0086.

ZHU Xiao-ke, LIANG Yi-qian, LIU Lin-lin etc. Optimal Design of Thin Film Transistor in Luminescent Film Deposition Technology[J]. Chinese Journal of Luminescence, 2020,41(1): 86-94 DOI： 10.3788/fgxb20204101.0086.

摘要

为了能制备高均匀性、大尺寸高清RGB-OLED显示终端，发展了一种全新的、无掩膜低成本的彩色薄膜沉积技术薄膜晶体管导向的薄膜沉积技术，并研究了薄膜晶体管的宽长比及栅压对电聚合发光薄膜性能的影响，寻找最佳的制备条件。实验中采用像素尺寸大小为200 m200 m的AMOLED基板，通过TFT来控制发光薄膜在ITO像素上的电化学聚合过程。首先对不同宽长比的TFT性能进行表征，再对不同宽长比的TFT在不同栅压条件下制备的电化学聚合薄膜进行表征和分析。实验结果表明，在同一宽长比的TFT控制下，施加栅压越大，制备的薄膜越厚，发光效果越好；在不同宽长比的TFT控制下，宽长比越大，聚合薄膜越厚，发光效果越好。在较大栅压下，选择宽长比为50 m/10 m的TFT最为适宜。研究结果为电化学聚合技术在AMOLED显示中的应用奠定了良好基础。

Abstract

In order to prepare high uniformity and large size high-definition RGB-OLED display terminals

we developed a new and low-cost color film deposition technology-thin film transistor(TFT) oriented film deposition technology

and studied the influence of width to length ratio of thin film transistor and gate voltage on the performance of electropolymerized luminescent film

to find the best preparation conditions. The electrochemical polymerization process of luminescent films on ITO pixels was controlled by TFT on AMOLED substrate with pixel size of 200 m200 m. Firstly

the properties of TFT with different width-length ratio were characterized

and then electrochemical polymerized films prepared with different width-length ratio under different grid pressure conditions were characterized and analyzed. The experimental results show that under the control of TFT with the same width to length ratio

the higher the gate pressure is applied

the thicker the prepared film is

and the better the luminescence effect is. Under the control of TFT with different width-length ratio

the higher the width-length ratio is

the thicker the polymer film is

and the better the luminescence effect is. TFT with a width length ratio of 50 m/10 m is the most suitable condition under large gate pressure. The results lay a good foundation for the application of electrochemical polymerization in AMOLED display.

关键词

电化学聚合有源矩阵有机电致发光显示薄膜晶体管

Keywords

electrochemical polymerizationactive matrix organic electroluminescent displaythin film transistor

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