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Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures
- Chinese Journal of Luminescence Vol. 41, Issue 1, Pages: 77-85(2020)
- 作者机构：
1. 聊城大学 物理科学与信息工程学院, 山东 聊城 252059
2. 山东省光通信科学与技术重点实验室,山东 聊城,252059
- 作者简介：
- 基金信息：Supported by National Natural Science Foundation of China(61775089);Industrial All
DOI：10.3788/fgxb20204101.0077
CLC： TN383+.1Published：5 January 2020，
Published Online：8 October 2019，
Received：6 August 2019，
Revised：17 September 2019，
扫 描 看 全 文
刘婷婷, 李淑红, 王文军等. 基于器件结构提高TADF-OLED器件的发光性能[J]. 发光学报, 2020,41(1): 77-85
LIU Ting-ting, LI Shu-hong, WANG Wen-jun etc. Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures[J]. Chinese Journal of Luminescence, 2020,41(1): 77-85
刘婷婷, 李淑红, 王文军等. 基于器件结构提高TADF-OLED器件的发光性能[J]. 发光学报, 2020,41(1): 77-85 DOI： 10.3788/fgxb20204101.0077.
LIU Ting-ting, LI Shu-hong, WANG Wen-jun etc. Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures[J]. Chinese Journal of Luminescence, 2020,41(1): 77-85 DOI： 10.3788/fgxb20204101.0077.
摘要
为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能，我们调整了器件结构，使主体材料发挥其优势。制备了基本结构为ITO/NPB（40 nm）/DMAC-DPS:
x
% BUBD-1（40 nm）/Bphen（30 nm）/LiF（0.5 nm）/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率，在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层；然后，在阳极和空穴传输层之间加入HAT-CN作为空穴注入层，形成HAT-CN/NPB结构的PN结，有效降低了器件的启亮电压（2.7 V）。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明，在最佳掺杂比例（2%）下，器件的外量子效率（EQE）达到4.92%，接近荧光OLED的EQE理论极限值；加入10 nm的DMAC-DPS作为间隔层，使得器件的EQE达到5.37%；HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压（2.7 V），将OLED器件的EQE提高到5.76%；HAT-CN的加入提高了器件的空穴迁移率，降低了单空穴器件的阻抗。TADF材料作为主体材料在提高OLED器件的光电性能方面具有很大的潜力。
Abstract
In order to improve the optoelectronic properties of organic light emitting diodes (OLEDs) with a hybrid film as the light emitting layer
which included the thermally activated delayed fluorescent (TADF) as host matrix and the sky-blue fluorescent material guest
we adjusted the device structures properly to improve the utilization rate of the host material. The basic structure of OLED is ITO/NPB(40 nm)/DMAC-DPS:
x
% BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al. First
the optoelectronic properties of host-guest OLED devices was studied with different doping ratio. Then
the DMAC-DPS (10 nm) was evaporated between the hole transport layer and the emission layer
it improved the utilization rate of the host material. Moreover
an organic material HAT-CN was added as the hole injection layer between the anode and the hole transport layer with the method of vacuum evaporation. Finally
the hole-only devices with or without HAT-CN were fabricated for the impedance spectra. The results indicated that the external quantum efficiency (EQE) of 4.92% was acquired at the optimal doping ratio (2%)
it approached the theoretical EQE limit of the fluorescent OLEDs. The DMAC-DPS (10 nm) between the hole transport layer and the emission layer improved the utilization rate of the host material
led to a higher EQE of 5.37%
and breaked the limit of 5% of the EQE of traditional fluorescent OLEDs. The HAT-CN/NPB heterojunction units effectively reduced the driving voltage of OLEDs (2.7 V)
and the maximum EQE increased to 5.76% at the same time. Additionally
From the lg
J
-lg
V
curves and the impedance spectrum analysis
the hole-only devices with HAT-CN improved the hole mobility and reduced the impedance of the devices. This study shows that TADF materials have great potential in enhancing the optoelectronic performance of OLEDs.
关键词
热活化延迟荧光材料TADF-OLED单空穴器件阻抗谱
Keywords
thermally activated delayed fluorescent (TADF)TADF-OLEDdevice structure hole only devicesimpedance spectrum
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