Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display

LOU Jun-hui; JIANG Shu; WU Tian-yi; FU Ju-jian; XIA Xing-da; HE Ze-shang; CHI Xiao; YING Bi

doi:10.3788/fgxb20183903.0383

您当前的位置：

首页 >

文章列表页 >

Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display

更新时间：2020-08-12

- Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display
- Chinese Journal of Luminescence Vol. 39, Issue 3, Pages: 383-387(2018)
- 作者机构：
  
  1. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
  2. 天马微电子集团上海,201205
- 作者简介：
- 基金信息：
  
  Supported by National High Technology Research and Development Program of China (863
- DOI：10.3788/fgxb20183903.0383
  CLC： TN321+.5
- Received：11 July 2017，
  
  Revised：27 August 2017，
  
  Published Online：18 September 2017，
  
  Published：05 March 2018
- 稿件说明：
移动端阅览
楼均辉, 姜姝, 吴天一等. 金属氧化物TFT阈值对LCD显示屏可靠性的影响[J]. 发光学报, 2018,39(3): 383-387

LOU Jun-hui, JIANG Shu, WU Tian-yi etc. Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display[J]. Chinese Journal of Luminescence, 2018,39(3): 383-387
楼均辉, 姜姝, 吴天一等. 金属氧化物TFT阈值对LCD显示屏可靠性的影响[J]. 发光学报, 2018,39(3): 383-387 DOI： 10.3788/fgxb20183903.0383.

LOU Jun-hui, JIANG Shu, WU Tian-yi etc. Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display[J]. Chinese Journal of Luminescence, 2018,39(3): 383-387 DOI： 10.3788/fgxb20183903.0383.

摘要

TFT的器件特性是影响氧化物TFT驱动的LCD显示屏良率的关键因素。本文研究了氧化物TFT的关键特性参数（阈值，稳定性）对窄边框LCD显示屏的良率和可靠性的影响。氧化物TFT阈值过负，将会导致TFT无法正常关断，而使显示屏的外围移位寄存器（VSR）电路失效。另外，在显示区域用于像素驱动的氧化物TFT的高温和背光照射下阈值持续负向漂移，最终会导致显示区域的驱动TFT漏电流过大，从而使显示屏出现串扰和残影不良。

Abstract

The characteristics of TFT are critical to the reliability of metal oxide-TFT drived LCD. The effect of

and stability of oxide-TFT to the reliability of narrow-bezel LCD display were researched. The negative

of the normal-on oxide-TFT can result in the failure of VSR scan circuits. Others

the negative-shift of the

of TFT in pixel at high temperature and under back-light illumination can cause the

negative shift and results in the cross-talk or image-sticking because of the high leakage current of TFT.

关键词

Keywords

references

HOSONO H. Recent progress in transparent oxide semiconductors:materials and devices application[J]. Thin Solid Films, 2007, 515(15):6000-6014.

ATHANASSOPOULOU F, CAWTHORN R, LYTRA K. 13.2:Invited paper:LTPS vs oxide backplanes for AMOLED displays:system design considerations and compensation techniques[C]. SID Symposium Digest of Technical Papers, San Diego, 2014.

MATSUO T, MORI S, BAN A, et al.. 8.3:Invited paper:Advantages of IGZO oxide semiconductor[C]. SID Symposium Digest of Technical Papers, San Diego, 2014.

KAMIYA T, NOMURA K, HOSONO H. Present status of amorphous In-Ga-Zn-O thin-film transistors[J]. Sci. Technol. Adv. Mater., 2010, 11(4):044305.

郭永林, 梁续旭, 胡守成, 等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015, 36(8):947-952. GUO Y L, LIANG X X, CHENG H U, et al.. Improvement of IGZO-TFTs performance with SiNx gate insulator modified by Al2O3 film[J]. Chin. J. Lumin., 2015, 36(8):947-952. (in Chinese)

LI Y, YAO R, WANG H, et al.. Enhanced performance in Al-doped ZnO based transparent flexible transparent thin-film transistors due to oxygen vacancy in ZnO film with Zn-Al-O interfaces fabricated by atomic layer deposition[J]. ACS Appl. Mater. Interf., 2017, 9(13):11711.

BUKKE R N, AVIS C, JIN J. Solution-processed amorphous In-Zn-Sn oxide thin-film transistor performance improvement by solution-processed Y2O3 passivation[J]. IEEE Electron Dev. Lett., 2016, 37(4):433-436.

高娅娜, 许云龙, 张建华, 等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016, 37(1):50-55. GAO Y N, XU Y L, ZHANG J H, et al.. Sol gel was prepared by Al2O3 interface modification of hafnium indium zinc oxide thin film transistor[J]. Chin. J. Lumin., 2016, 37(1):50-55. (in Chinese)

KANG D, LIM H, KIM C, et al.. Amorphous gallium indium zinc oxide thin film transistors:sensitive to oxygen molecules[J]. Appl. Phys. Lett., 2007, 90(19):488.

HWANG D K, MISRA M, LEE Y E, et al.. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process[J]. Appl. Surf. Sci., 2017, 405:344-349.

信恩龙, 李喜峰, 张建华. 溶胶凝胶法制备透明IZO薄膜晶体管[J]. 发光学报, 2013, 34(2):208-212. XIN E L, LI X F, ZHANG J H. Sol gel preparation of transparent IZO thin film transistor[J]. Chin. J. Lumin., 2013, 34(2):208-212. (in Chinese)

范学丽, 靖瑞宽, 翁超, 等. 湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究[J]. 液晶与显示, 2016, 31(1):67-73. FAN X L, JING R K, WENG C, et al.. Improvement of etching uniformity and influence factors of wet etching of FI CD uniformity[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(1):67-73. (in Chinese)

CHOWDHURY M D H, UM J G, JIN J. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250℃[J]. Appl. Phys. Lett., 2014, 105(23):2945.

霍晓迪, 陈兵, 李知勋, 等. 过孔的不同干法刻蚀工艺对TFT-LCD性能的影响研究[J]. 液晶与显示, 2016, 31(1):58-61. HUO X D, CHEN B, JI H L, et al.. Influence of different dry etching process of contact hole on TFT-LCD performance[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(1):58-61. (in Chinese)

LEE K H, JI S J, SON K S, et al.. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors[J]. Appl. Phys. Lett., 2009, 95(23):1309.

JI K H, KIM J I, MO Y G, et al.. Comparative study on light-induced bias stress instability of IGZO transistors with, and, gate dielectrics[J]. IEEE Electron Dev. Lett., 2010, 31(12):1404-1406.

YAO J, XU N, DENG S, et al.. Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy[J]. IEEE Trans. Electron Dev., 2011, 58(4):1121-1126.

CHONG E, CHUN Y S, KIM S H, et al.. Effect of oxygen on the threshold voltage of a-IGZO TFT[J]. J. Elect. Eng. Technol., 2011, 6(4):539-542.

KIM Y S, NAHM H H, KIM D H. Microscopic mechanism of the negative bias and illumination stress instability of amorphous oxide TFTs[C]. SID Symposium Digest of Technical Papers, Boston, 2012.

Views

312

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness

Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Status and Perspectives of Deep Ultraviolet LED Packaging Technology

Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode

Reliability of Low Color Temperature Phosphor-free LED Light Source

Related Author

WANG Hong

XIE Zijing

LAN Yian

XIAO Guowei

ZENG Zhaoming

WAN Chuiming

Jun WANG

Pei MIAO

Related Institution

Zhongshan Institute of Modern Industrial Technology, South China University of Technology

APt Electronics Co. Ltd.

School of Electronics and Information Engineering， South China University of Technology

Suzhou Everbright Photonics Co., Ltd.

College of Electronic Information, Sichuan University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰