Development of High Power Diode Laser

WANG Li-jun; NING Yong-qiang; QIN Li; TONG Cun-zhu; CHEN Yong-yi

doi:10.3788/fgxb20153601.0001

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Development of High Power Diode Laser

更新时间：2020-08-12

- Development of High Power Diode Laser
- Chinese Journal of Luminescence Vol. 36, Issue 1, Pages: 1-19(2015)
- 作者机构：
  
  发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153601.0001
  CLC： TN248.4
- Published：3 January 2015，
  
  Received：12 October 2014，
  
  Revised：16 November 2014，
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王立军, 宁永强, 秦莉等. 大功率半导体激光器研究进展[J]. 发光学报, 2015,36(1): 1-19

WANG Li-jun, NING Yong-qiang, QIN Li etc. Development of High Power Diode Laser[J]. Chinese Journal of Luminescence, 2015,36(1): 1-19
王立军, 宁永强, 秦莉等. 大功率半导体激光器研究进展[J]. 发光学报, 2015,36(1): 1-19 DOI： 10.3788/fgxb20153601.0001.

WANG Li-jun, NING Yong-qiang, QIN Li etc. Development of High Power Diode Laser[J]. Chinese Journal of Luminescence, 2015,36(1): 1-19 DOI： 10.3788/fgxb20153601.0001.

摘要

对半导体激光器的发展历史和发展现状进行了综述

并具体介绍了长春光学精密机械与物理研究所近年来在大功率半导体激光器方面所取得的主要进展

特别是在大功率半导体激光器的激光光源、垂直腔面发射激光器和新型激光器芯片等方面。

Abstract

This paper reviews on the history and the development status for semiconductor lasers

meanwhile focuses on the high power semiconductor laser achievements acquired by Changchun Institute of Optics

Fine Mechanics and Physics(CIOMP) in recent years

especially at the aspects of high power semiconductor laser sources

vertical cavity surface emitting lasers(VCSEL) and novel laser chips.

关键词

大功率半导体激光器边发射激光器垂直腔面发射激光器芯片

Keywords

high powerdiode laseredge emitting laservertical cavity surface emitting laserchip

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