Bo LI, Zhen-fu WANG, Bo-cang QIU, et al. Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array. [J]. Chinese Journal of Luminescence 41(9):1158-1164(2020)
DOI:
Bo LI, Zhen-fu WANG, Bo-cang QIU, et al. Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array. [J]. Chinese Journal of Luminescence 41(9):1158-1164(2020) DOI: 10.37188/fgxb20204109.1158.
Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array
The demand for high peak power semiconductor laser arrays in high temperature working conditions is becoming more and more prominent. The high peak power 960 nm semiconductor laser arrays packaged by microchannel cooler were experimentally studied through the precision temperature control system. A series of output characteristics such as the peak power, power conversion efficiency, working voltage and spectrum are tested from 10℃ to 80℃, combined with theoretical analysis. The energy loss distribution of power conversion efficiency is given at different temperatures. The results show that the power conversion efficiency drops from 63.95% to 47.68% after the operating temperature increases from 10℃ to 80℃, and the proportion of carrier leakage losses increases from 1.93% to 14.85%, which is the main factor that causes the decline in the power conversion efficiency. This study has important guiding significance for high peak power semiconductor laser arrays in high temperature applications and laser chip design.
关键词
高功率半导体激光阵列高温微通道电光转化效率能量损耗分布
Keywords
high-power semiconductor laser arrayhigh temperaturemicrochannelpower conversion efficiencyenergy loss distribution
YUAN Q H, JING H Q, ZHONG L, et al.. Thermal stressin high-power semiconductor laser packaging[J].Chin. J. Lasers, 2019, 46(10):1001009-1-6. (in Chinese)
WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J].Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)
CRUMP P A, CRUM T R, DEVITO M A, et al.. High-efficiency high-power 808-nm laser array and stacked arrays optimized for elevated temperature operation[C].Proceedings of SPIE 5336, High-power Diode Laser Technology and Applications Ⅱ, San Jose CA, United States, 2004: 144-155.
SCHRÖDER D, SCHRÖDER M, WERNER E, et al.. Improved laser diode for high power and high temperature applications[C].Proceedings of SPIE 7198, High-power Diode Laser Technology and Applications Ⅷ, San Jose, California, United States, 2009: 1-8.
BACCHIN G, FILY A, QIU B,et al.. High temperature and high peak-power 808nm QCW bars and stacks[J].Proceedings of SPIE 7583, High-power Diode Laser Technology and Applications Ⅷ, San Francisco, California, United States, 2010:1-11.
KAUL T, ERBERT G, MAAßDORF A, et al.. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs[J].Semicond. Sci. Technol., 2018, 33(3):035005.
JIANG K, LI P X, SHEN Y, et al.. 76% Maximum wall plug efficiency of 940 nm laser diode with step graded index structure[J].Chin. J. Lasers, 2014, 41(4):0402003-1-4. (in English
WANG Z F, YANG G W, WU J Y, et al.. High-power, high-efficiency 808 nm laser diode array[J].Acta Phys. Sinica, 2016, 65(16):164203-1-6. (inChinese
WANG Z F, LI T, YANG G W, et al.. High power, high efficiency continuous-wave 808 nm laser diode arrays[J].Opt.Laser Technol., 2017, 97:297-301.
EPPERLEIN P W. Semiconductor Laser Engineering, Reliability and Diagnostics:A Practical Approach to High Power and Single Mode Devices [M]. New York:John Wiley & Sons Ltd, 2013:72-75.
SONG Y F, WANG Z F, LI T, et al.. Efficiency analysis of 808 nm laser diode array underdifferent operating temperatures[J].Acta Phys. Sinica, 2017, 66(10):104202-1-6. (in Chinese)
KANSKAR M, EARLES T, GOODNOUGH T, et al.. High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems[C].Proceedings of SPIE5738, Novel In-plane Semiconductor Lasers Ⅳ, San Jose, California, United States, 2005: 47.
CRUMP P, GRIMSHAW M, WANG J, et al.. 85% power conversion efficiency 975 nm broad area diode lasers at -50 ℃, 76 % at 10 ℃[C].Proceedings of IEEE 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Long Beach, CA, USA, 2006: 1-2.
YANSON D, LEVI M, SHAMAY M, et al.. Facet engineering of high power single emitters[C].Proceedings of SPIE 7918, High-power Diode Laser Technology and Applications Ⅸ, San Francisco, California, United States, 2011: 1-12.