您当前的位置:
首页 >
文章列表页 >
Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array
Device Fabrication and Physics | 更新时间:2020-09-10
    • Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

    • Chinese Journal of Luminescence   Vol. 41, Issue 9, Pages: 1158-1164(2020)
    • DOI:10.37188/fgxb20204109.1158    

      CLC: TN248.4
    • Received:09 June 2020

      Accepted:01 July 2020

      Published:2020-09

    移动端阅览

  • Bo LI, Zhen-fu WANG, Bo-cang QIU, et al. Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array[J]. Chinese journal of luminescence, 2020, 41(9): 1158-1164. DOI: 10.37188/fgxb20204109.1158.

  •  
  •  

0

Views

182

下载量

3

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips
Research Progress of Vertical-cavity Surface-emitting Laser

Related Author

Yu LAN
Yu-liang ZHAO
Yi-dong CHANG
Bo LI
Yu-xian LIU
Te LI
Guo-wen YANG
Xiao-Ying ZHANG

Related Institution

State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences
Shaanxi Institute of Metrology Science
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences
0