Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser

Jin-you LI; Hai-long WANG; Jin YANG; Chun-fang CAO; Xu-yi ZHAO; Wen-fu YU; Qian GONG

doi:10.37188/fgxb20204108.0971

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Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser

Device Fabrication and Physics | 更新时间：2020-09-10

- Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser
- Chinese Journal of Luminescence Vol. 41, Issue 8, Pages: 971-976(2020)
- 作者机构：
  
  1.曲阜师范大学物理工程学院山东省激光偏光与信息技术重点实验室, 山东曲阜 273165
  2.中国科学院大学信息功能材料国家重点实验室, 上海 200050
  3.中国科学院上海微系统与信息技术研究所, 上海 200050
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Shandong Province Natural Science Found
- DOI：10.37188/fgxb20204108.0971
  CLC：
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Jin-you LI, Hai-long WANG, Jin YANG, et al. Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser. [J]. Chinese Journal of Luminescence 41(8):971-976(2020)
DOI：

Jin-you LI, Hai-long WANG, Jin YANG, et al. Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser. [J]. Chinese Journal of Luminescence 41(8):971-976(2020) DOI： 10.37188/fgxb20204108.0971.

摘要

研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性，并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm，脊条宽度为3 μm。实验测量得到该激光器在15~100 K的电压温度系数（d,V,/d,T,）为7.87~8.32 mV/K，在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K，在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K，实验测量与理论模型计算得出的电压温度系数接近，理论模型能较好地模拟激光器的温度电压特性；但在15~100 K相差较大，还需要进一步完善。

Abstract

The current-voltage characteristics of an InGaAs/GaAs/InGaP quantum well laser at different temperatures have been investigated. A theoretical model has been developed to simulate the current-voltage characteristics of the laser. The length of the laser cavity utilized in the experiment is 0.3 mm, and the ridge width of the laser is 3 μm. Experimental voltage-temperature coefficients (d,V,/d,T,) of the laser are from 7.87 to 8.32 mV/K within 15-100 K, and are from 2.93 to 3.17 mV/K within 100-300 K. Theoretical voltage-temperature coefficients of the laser in the range of 15-100 K are 2.56 to 2.75 mV/K, and in the range of 100-300 K are 3.91 to 4.15 mV/K. Within 100-300 K, the theoretical voltage-temperature coefficients are close to the experimental coefficients. However, within 15-100 K, there are large differences between the theoretical coefficients and experimental ones, which need to be improved.

关键词

量子阱激光器InGaAs/GaAs/InGaP低温温度电压特性

Keywords

quantum well laserInGaAs/GaAs/InGaPlow temperaturevoltage-temperature characteristics

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