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Simulation Study of N-Polar InGaN-Based Red LEDs with Superlattice Electron Deceleration Layer
更新时间：2025-11-27

    • Simulation Study of N-Polar InGaN-Based Red LEDs with Superlattice Electron Deceleration Layer

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    • “In the field of nitride RGB full-color Micro LED display technology, researchers have proposed a novel InGaN based red LED structure that effectively improves luminous efficiency and provides new ideas for the preparation of high luminous efficiency InGaN based red Micro LEDs.”
    • Chinese Journal of Luminescence   Pages: 1-7(2025)

    • DOI：10.37188/CJL.20250229    

      CLC： TN312.8
    • CSTR：32170.14.CJL.20250229    

    • Published Online：27 November 2025，

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  • WANG Zonghao,WANG Yusen,ZUO Changcai,et al.Simulation Study of N-Polar InGaN-Based Red LEDs with Superlattice Electron Deceleration Layer[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20250229 CSTR： 32170.14.CJL.20250229.

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Related Author

ZHANG Yuantao
ZHANG Baolin
DUAN Bin
GAO Haozhe
ZUO Changcai
YU Jiaqi
WANG Yusen
DENG Gaoqiang

Related Institution

College of Physics， Jilin University
State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
Tan Kah Kee Innovation Laboratory， Future Display Institue of Xiamen
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices， Ministry of Education， Fujian Key Laboratory of Semiconductor Materials and Applications， CI Center for OSED， Department of Physics， Xiamen University
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