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2D h-BN Nanosheets as Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-Emitting Diode
更新时间：2025-11-04

    • 2D h-BN Nanosheets as Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-Emitting Diode

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    • “In the field of next-generation display technology, researchers have introduced hexagonal boron nitride materials to effectively improve the performance of quantum dot light-emitting diodes, providing new ideas for the development of display technology.”
    • Chinese Journal of Luminescence   Pages: 1-10(2025)

    • DOI：10.37188/CJL.20250220    

      CLC：
    • CSTR：32170.14.CJL. 20250220    

    • Published Online：30 October 2025，

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  • WANG Ning,ZHANG Yu,YANG Suwen,et al.2D h-BN Nanosheets as Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-Emitting Diode[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20250220 CSTR： 32170.14.CJL. 20250220.

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Related Author

DONG Jingnan
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Related Institution

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Institute of Optics and Electronics， Chinese Academy of Sciences
Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
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