Influence of the AlxGa1-xAs spacer layer in resonant periodic gain active region on the performance for 940 nm vertical cavity surface-emitting laser
|更新时间:2025-06-17
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Influence of the AlxGa1-xAs spacer layer in resonant periodic gain active region on the performance for 940 nm vertical cavity surface-emitting laser
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“In the field of optoelectronics, researchers have designed RPG VCSEL active regions with different Al compositions using PICS 3D simulation software, achieving high output power and efficiency. By adjusting the Al composition, non radiative recombination was effectively reduced, providing theoretical guidance for material selection in the active region of quantum well RPGs.”
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD018;2022SX-AT001;2021SX-AT001);National Natural Science Foundation of China(61904120;21972103);Natural Science Basic Research Plan in Shaanxi Province of China(2023-JC-QN-0552);Key R&D Projects in Shanxi Province(202302150101001);Shanxi “1331 project”
WU Bin,DONG Hailiang,JIA Zhigang,et al.Influence of the AlxGa1-xAs spacer layer in resonant periodic gain active region on the performance for 940 nm vertical cavity surface-emitting laser[J].Chinese Journal of Luminescence,
WU Bin,DONG Hailiang,JIA Zhigang,et al.Influence of the AlxGa1-xAs spacer layer in resonant periodic gain active region on the performance for 940 nm vertical cavity surface-emitting laser[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20250151 CSTR: 32170.14.CJL.20250151.
Influence of the AlxGa1-xAs spacer layer in resonant periodic gain active region on the performance for 940 nm vertical cavity surface-emitting laser增强出版